Resistive hystersis effects in perovskite oxide-based heterostructure junctions

The electrical and structural properties of the oxide-based metal/ferroelectric/metal (MFM) junctions are reported. The heterostructures are composed of ultrathin layers of La0.7Ca0.3MnO3 (LCMO) as a metallic layer and BaTiO3 (BTO) as a ferroelectric layer. Junction based devices, having the dimensions of 400×200μm2, have been fabricated upon LCMO/BTO/LCMO heterostructures by photolithography and Ar-ion milling technique. The dc current-voltage (I-V) characteristics of the MFM junctions were carried out. At 300K, the devices showed the linear (I-V) characteristics, whereas at 77K, (I-V) curves exhibited some reproducible switching behaviors with well-defined remnant currents. The resulting resistance modulation is very different from what was already reported in ultrathin ferroelectric layers displaying resistive switching. A model is presented to explain the data.

[1]  L. Baudry,et al.  Model for ferroelectric semiconductors thin films accounting for the space varying permittivity , 2005 .

[2]  California,et al.  Field-induced resistive switching in metal-oxide interfaces , 2004, cond-mat/0402687.

[3]  Rainer Waser,et al.  Resistive switching in metal–ferroelectric–metal junctions , 2003 .

[4]  Tx,et al.  Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface , 2002, cond-mat/0212464.

[5]  C. Gerber,et al.  Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals , 2001 .

[6]  S. Ogale,et al.  Electroresistance and electronic phase separation in mixed-valent manganites. , 2000, Physical review letters.

[7]  L. Baudry.  Theoretical investigation of the influence of space charges on ferroelectric properties of PbZrTiO3 thin film capacitor , 1999 .

[8]  C. Cabral,et al.  (Ba, Sr)TiO3 dielectrics for future stacked- capacitor DRAM , 1999, IBM J. Res. Dev..

[9]  S. Ogale,et al.  Manganite-based devices: opportunities, bottlenecks and challenges , 1998, Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences.

[10]  Mathews,et al.  Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures , 1997, Science.

[11]  Wolf,et al.  Ferroelectric Schottky diode. , 1994, Physical review letters.

[12]  Maglione,et al.  Space-charge relaxation in perovskites. , 1994, Physical review. B, Condensed matter.

[13]  R. Waser,et al.  Theory of conduction and breakdown in perovskite thin films , 1992 .

[14]  C. Kittel.  Introduction to solid state physics , 1954 .