Investigation of charging damage induced V/sub t/ mismatch for submicron mixed-signal technology
暂无分享,去创建一个
[1] C. Gabriel. Gate oxide damage from polysilicon etching , 1991 .
[2] J. McVittie,et al. Thin-oxide damage from gate charging during plasma processing , 1992, IEEE Electron Device Letters.
[3] M.-R. Lin,et al. Characterization and optimization of metal etch processes to minimize charging damage to submicron transistor gate oxide , 1994, IEEE Electron Device Letters.
[4] K. Noguchi,et al. Modeling oxide thickness dependence of charging damage by plasma processing , 1993, IEEE Electron Device Letters.
[5] M. Okandan,et al. Impact of polysilicon dry etching on 0.5 /spl mu/m NMOS transistor performance: the presence of both plasma bombardment damage and plasma charging damage , 1994, IEEE Electron Device Letters.
[6] E. Worley,et al. The effects of plasma etching induced gate oxide degradation on MOSFET's 1/f noise , 1995, IEEE Electron Device Letters.
[7] K. Cheung,et al. Charging damage from plasma enhanced TEOS deposition , 1995, IEEE Electron Device Letters.
[8] Sychyi Fang,et al. A new model for thin oxide degradation from wafer charging in plasma etching , 1992, 1992 International Technical Digest on Electron Devices Meeting.
[9] R. Rakkhit,et al. Process induced oxide damage and its implications to device reliability of submicron transistors , 1993, 31st Annual Proceedings Reliability Physics 1993.