Phase-Change Memory and Optical Data Storage
暂无分享,去创建一个
Xiang Shen | Yimin Chen | Guoxiang Wang | Yegang Lv | Guoxiang Wang | Yimin Chen | X. Shen | Yegang Lv
[1] R. O. Jones,et al. Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe , 2007 .
[2] G. Grest,et al. Erratum: Liquid-glass transition, a free-volume approach , 1982 .
[3] S. Ovshinsky. Reversible Electrical Switching Phenomena in Disordered Structures , 1968 .
[4] Matthias Wuttig,et al. Reversible switching in phase-change materials , 2008 .
[5] D. Ielmini,et al. Phase change materials and their application to nonvolatile memories. , 2010, Chemical reviews.
[6] Y. K. Kim,et al. Changes in the electronic structures and optical band gap of Ge2Sb2Te5 and N-doped Ge2Sb2Te5 during phase transition , 2007 .
[7] Bo Liu,et al. Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications , 2012 .
[8] Shih-Hung Chen,et al. Phase-change random access memory: A scalable technology , 2008, IBM J. Res. Dev..
[9] B. Kooi,et al. Crystallization Kinetics of Supercooled Liquid Ge–Sb Based on Ultrafast Calorimetry , 2016 .
[10] Songlin Feng,et al. Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed , 2012 .
[11] Zhitang Song,et al. Microstructure evolution and crystallography of the phase-change material TiSbTe films annealed in situ , 2016 .
[12] J. H. Coombs,et al. Laser‐induced crystallization phenomena in GeTe‐based alloys. I. Characterization of nucleation and growth , 1995 .
[13] Ming-Jinn Tsai,et al. Ga2Te3Sb5—A Candidate for Fast and Ultralong Retention Phase‐Change Memory , 2009 .
[14] M. Wuttig,et al. Atomic force microscopy measurements of crystal nucleation and growth rates in thin films of amorphous Te alloys , 2004 .
[16] N. Sun,et al. Effect of the Sn dopant on the crystallization of amorphous Ge2Sb2Te5 films induced by an excimer laser , 2015 .
[17] Young Kook Lee,et al. Effect of Heating Rate on the Activation Energy for Crystallization of Amorphous Ge2Sb2Te5 Thin Film , 2009 .
[18] Masaya Notomi,et al. Optical memory: Phase-change memory , 2015 .
[19] Daniel W. Hewak,et al. Fragile‐to‐Strong Crossover in Supercooled Liquid Ag‐In‐Sb‐Te Studied by Ultrafast Calorimetry , 2015 .
[20] Jeong-Woo Park,et al. Characterization of Amorphous Phases of Ge2Sb2Te5 Phase-Change Optical Recording Material on Their Crystallization Behavior , 1999 .
[21] H. Sohn,et al. Phase change behavior in oxygen-incorporated Ge2Sb2Te5 films , 2009 .
[22] William J. Gallagher,et al. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited) , 1999 .
[23] Understanding the role of Zn in improving the phase change behaviors of Sb2Te3 films , 2015 .
[24] Rong Huang,et al. Amorphous thermal stability of Al-doped Sb2Te3 films for phase-change memory application , 2013 .
[25] Song-Yeu Tsai,et al. Thermal- and Laser-Induced Order–Disorder Switching of Ag-Doped Fast-Growth Sb70Te30 Phase-Change Recording Films , 2007, IEEE Transactions on Magnetics.
[26] Bo Liu,et al. W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention , 2012 .
[27] Noboru Yamada,et al. From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials. , 2011, Nature materials.
[28] Bingchu Cai,et al. Effects of si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory , 2006 .
[29] J. Přikryl,et al. Ge–Sb–Te thin films deposited by pulsed laser: An ellipsometry and Raman scattering spectroscopy study , 2009 .
[30] Influence of the additive Ag for crystallization of amorphous Ge―Sb―Te thin films , 2009 .
[31] Se-Young Choi,et al. Phase transition characteristics of Bi/Sn doped Ge2Sb2Te5thin film for PRAM application , 2007 .
[32] F. Rao,et al. Performance improvement of Sb2Te3 phase change material by Al doping , 2011 .
[33] Carl V. Thompson,et al. On the approximation of the free energy change on crystallization , 1979 .
[34] Daniel Krebs,et al. Crystal growth within a phase change memory cell , 2014, Nature Communications.
[35] R. O. Jones. Bonding in phase change materials: concepts and misconceptions , 2018, Journal of physics. Condensed matter : an Institute of Physics journal.
[36] Bo Liu,et al. Al1.3Sb3Te material for phase change memory application , 2011 .
[37] Yoshihisa Fujisaki,et al. Overview of emerging semiconductor non-volatile memories , 2012, IEICE Electron. Express.
[38] Yung-Sung Hsu,et al. Optical Properties and Crystallization Characteristics of Ge-Doped Sb70Te30 Phase Change Recording Film , 2003 .
[39] J. Tominaga,et al. Understanding the phase-change mechanism of rewritable optical media , 2004, Nature materials.
[40] Xiang Shen,et al. Unraveling the Crystallization Kinetics of Supercooled Liquid GeTe by Ultrafast Calorimetry , 2017 .
[41] Chih-Yuan Lu. Future prospects of NAND flash memory technology--the evolution from floating gate to charge trapping to 3D stacking. , 2012, Journal of nanoscience and nanotechnology.
[42] Songlin Feng,et al. Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application , 2012 .
[43] M. Fontana,et al. Crystallization process on amorphous GeTeSb samples near to eutectic point Ge15Te85 , 2009 .
[44] Liangcai Wu,et al. Improved phase-change characteristics of Zn-doped amorphous Sb7Te3 films for high-speed and low-power phase change memory , 2013 .
[45] J. Mauro,et al. Fragile-to-strong transition in metallic glass-forming liquids. , 2010, The Journal of chemical physics.
[46] Lian Yu,et al. Crystal growth kinetics exhibit a fragility-dependent decoupling from viscosity. , 2008, The Journal of chemical physics.
[47] Harish Bhaskaran,et al. Integrated all-photonic non-volatile multi-level memory , 2015, Nature Photonics.
[48] J. Robertson,et al. Bonding origin of optical contrast in phase-change memory materials , 2010 .
[49] Songlin Feng,et al. Influence of silicon on the thermally-induced crystallization process of Si-Sb4Te phase change materials , 2011 .
[50] M. Wuttig,et al. Phase-change materials for rewriteable data storage. , 2007, Nature materials.
[51] Crystallization and C-RAM application of Ag-doped Sb2Te3 material , 2006 .
[52] Q. Nie,et al. Characterization of Physical Properties for Zn-Doped Sb3Te Films , 2013 .
[53] K. Gopalakrishnan,et al. Phase change memory technology , 2010, 1001.1164.
[54] H. E. Kissinger. Reaction Kinetics in Differential Thermal Analysis , 1957 .
[55] P. K. Tan,et al. Temperature Dependence of Phase-Change Random Access Memory Cell , 2006 .
[56] Herman J. Borg,et al. Trends in optical recording , 1999 .
[57] Edgar Dutra Zanotto,et al. Does viscosity describe the kinetic barrier for crystal growth from the liquidus to the glass transition? , 2010, The Journal of chemical physics.
[58] Behrad Gholipour,et al. Characterization of supercooled liquid Ge2Sb2Te5 and its crystallization by ultrafast-heating calorimetry. , 2012, Nature materials.
[59] C. David Wright,et al. On‐Chip Photonic Memory Elements Employing Phase‐Change Materials , 2014, Advanced materials.
[60] Richard Dronskowski,et al. The role of vacancies and local distortions in the design of new phase-change materials. , 2007, Nature materials.
[61] A. Visconti,et al. Reliability Characterization Issues for Nanoscale Flash Memories: A Case Study on 45-nm NOR Devices , 2013, IEEE Transactions on Device and Materials Reliability.
[62] S. Elliott,et al. Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials. , 2008, Nature materials.
[63] V. Weidenhof,et al. Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements , 2000 .
[64] Kumar Virwani,et al. Phase transitions in Ge-Sb phase change materials , 2009 .
[65] D. Zeng,et al. Characteristics of Sb2O3 nanoparticles synthesized from antimony by vapor condensation method , 2004 .
[66] Noboru Yamada,et al. Structural basis for the fast phase change of Ge2Sb2Te5: Ring statistics analogy between the crystal and amorphous states , 2006 .
[67] Micro-Raman spectroscopy of mechanically exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2Te3 materials , 2012, 1201.5678.
[68] Hongbo Lan,et al. UV-nanoimprint lithography: structure, materials and fabrication of flexible molds. , 2013, Journal of nanoscience and nanotechnology.
[69] Liangcai Wu,et al. Phase change behaviors of Zn-doped Ge2Sb2Te5 films , 2012 .
[70] E. Rimini,et al. Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements , 2004 .
[71] Enhanced thermal stability and electrical behavior of Zn-doped Sb2Te films for phase change memory application , 2013 .
[72] S. Lai. Brief history of ETOX NOR flash memory. , 2012, Journal of nanoscience and nanotechnology.
[73] Harish Bhaskaran,et al. Photonic non-volatile memories using phase change materials , 2012 .
[74] S. G. Bishop,et al. Distribution of nanoscale nuclei in the amorphous dome of a phase change random access memory , 2014 .
[75] Hisashi Shima,et al. Resistive Random Access Memory (ReRAM) Based on Metal Oxides , 2010, Proceedings of the IEEE.
[76] Au doped Sb3Te phase-change material for C-RAM device , 2008 .