Stable Al2O3 Encapsulation of MoS2‐FETs Enabled by CVD Grown h‐BN
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G. Fiori | A. Radenović | A. Kis | D. Neumaier | M. Lemme | M. Otto | D. Marian | B. Canto | Agata Piacentini | Daniel S Schneider | Enrique González Marín | Zhenyu Wang | Daniel S. Schneider