Intrinsic carrier concentration and minority‐carrier mobility of silicon from 77 to 300 K

A considerable improvement in the accuracy of the measurement of the intrinsic carrier concentration in silicon near room temperature has recently been reported. This was achieved by the accurate analysis of minority‐carrier current flow in specially fabricated p‐n junction devices. In this paper this technique has been extended to measurements down to 77 K. A further improvement of the technique has been the simultaneous measurement of the minority‐carrier electron mobility utilizing open‐circuit voltage decay measurements.

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