Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3 as Gate Dielectric

Thermal stability of AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors (MOS-HEMTs) and diodes using Gd<sub>2</sub>O<sub>3</sub> is investigated by means of different thermal tests. DC and pulsed <inline-formula> <tex-math notation="LaTeX">$I$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">$V$ </tex-math></inline-formula> characterization of the devices before and after the processes shows that the devices with Gd<sub>2</sub>O<sub>3</sub> dielectric layer have more than three orders of magnitude lower leakage current, higher ON/OFF ratio of about <inline-formula> <tex-math notation="LaTeX">$10^{8}$ </tex-math></inline-formula>, and better thermal stability after the long thermal storage test (500 °C, 8 days) compared with conventional devices. In addition, no hysteresis and a stable threshold voltage were observed after a short thermal test (500 °C, 5 min) in the MOS diodes, in good agreement with the lower trapping effects observed in the MOS-HEMTs.

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