MBE grown GaInNAs-based multi-Watt disk lasers

We report the fabrication and characterization of high-quality GaInNAs/GaAs gain mirror as an active media for semiconductor disk lasers emitting at the 12XX nm spectral range. The structure was fabricated by molecular beam epitaxy using a radio frequency plasma source for incorporating the nitrogen. The growth parameters have been optimized to reduce detrimental effects of nitrogen on the emission efficiency. Using the gain mirror, which comprised 10 GaInNAs quantum wells with a relatively low content of nitrogen, we demonstrated semiconductor disk laser with an output power of ∼5 W and a differential efficiency of ∼20%.

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