论文信息 - Effect of Ge-dots buried below the interface on the transport properties of Schottky diodes - 字舞流文

Effect of Ge-dots buried below the interface on the transport properties of Schottky diodes

C. Clerc | V. Yam | D. Bouchier | V. L. Thanh | F. Meyer | O. Schneegans | F. Dufaye | A. Hattab | R. Meyer