Computer analysis and design optimization of magnetic-field sensitive MOS device

Abstract In this paper, a two-dimensional numerical simulation for a Magnetic-Field-Sensitive device (split-drain MOSFET) is presented. Different model equations for the subthreshold and normal regions are given. The computation cost is low. In order to optimize the design of the device, the BFGS optimization method is adopted. The theoretical results indicate that the highest sensitivity of the device occurs at an aspect ratio of 0.8. This is in good agreement with the experimental work.