论文信息 - Technological Tendency of Bonding for MEMS Device by Japanese Patent Research - 字舞流文

Technological Tendency of Bonding for MEMS Device by Japanese Patent Research

Tadatomo Suga | Toshihiro Itoh | Hirotake Akaike

[1] Tadatomo Suga,et al. Room temperature GaAsSi and InPSi wafer direct bonding by the surface activated bonding method , 1997 .

[2] Tadatomo Suga,et al. Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method , 1997 .