High‐power single‐mode AlGaAs lasers with bent‐waveguide nonabsorbing etched mirrors

A nonabsorbing etched mirror structure for AlGaAs single‐quantum‐well graded‐refractive‐index separate‐confinement heterostructure ridge lasers is analyzed with respect to mirror coupling coefficient, threshold current penalty, and far‐field pattern. Measurements of the mirror temperature showed a reduction from 50 to 20 K at 30 mW optical power depending on the degree of overlap of the optical intensity with the absorbing bent‐waveguide profile. Pulsed catastrophic optical damage power levels up to 400 mW and a thermally saturated cw power of 165 mW with single‐mode operation up to 80 mW have been achieved. Lifetime measurements at 40 mW constant optical power indicated degradation rates ≤10−5/h comparable to AlGaAs lasers with cleaved and coated mirrors.

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