Thermally Introduced Bismuth Clustering in Ga(P,Bi) Layers under Group V Stabilised Conditions Investigated by Atomic Resolution In Situ (S)TEM

[1]  K. Volz,et al.  In Situ Thermal Annealing Transmission Electron Microscopy (TEM) Investigation of III/V Semiconductor Heterostructures Using a Setup for Safe Usage of Toxic and Pyrophoric Gases , 2017, Microscopy and Microanalysis.

[2]  H. Döscher,et al.  GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient , 2017 .

[3]  I. Rey‐Stolle,et al.  MOVPE growth of GaP on Si with As initial coverage , 2017 .

[4]  S. Brückner,et al.  In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient , 2017 .

[5]  K. Volz,et al.  MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8 , 2017 .

[6]  Dongwon Shin,et al.  NiAl Oxidation Reaction Processes Studied In Situ Using MEMS-Based Closed-Cell Gas Reaction Transmission Electron Microscopy , 2017, Oxidation of Metals.

[7]  Theresa M. Christian,et al.  Bismuth incorporation into gallium phosphide , 2016, Clusters and Nanomaterials.

[8]  M. Hanke,et al.  Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1−xBix/GaAs quantum wells , 2016, Nanotechnology.

[9]  K. Volz,et al.  Preparation and Loading Process of Single Crystalline Samples into a Gas Environmental Cell Holder for In Situ Atomic Resolution Scanning Transmission Electron Microscopic Observation , 2016, Microscopy and Microanalysis.

[10]  K. Volz,et al.  Correlation of the nanostructure with optoelectronic properties during rapid thermal annealing of Ga(NAsP) quantum wells grown on Si(001) substrates , 2016 .

[11]  D. P. Samajdar,et al.  Valence band anticrossing model for GaSb1−xBix and GaP1−xBix using k.p method , 2015 .

[12]  S. Sweeney,et al.  Growth and characterisation of Ga(NAsBi) alloy by metal–organic vapour phase epitaxy , 2014 .

[13]  Z. Y. Li,et al.  A practical approach to quantify the ADF detector in STEM , 2014 .

[14]  J. Puustinen,et al.  Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi , 2014, Nanotechnology.

[15]  Lei Yu,et al.  Real-time observation of the solid-liquid-vapor dissolution of individual tin(IV) oxide nanowires. , 2014, ACS nano.

[16]  T. D. Das.  The effect of Bi composition on the properties of InP1−xBix grown by liquid phase epitaxy , 2014 .

[17]  Sangam Chatterjee,et al.  Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser , 2013 .

[18]  S. Sweeney,et al.  Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared , 2013 .

[19]  D. Nackashi,et al.  Novel MEMS-Based Gas-Cell/Heating Specimen Holder Provides Advanced Imaging Capabilities for In Situ Reaction Studies , 2012, Microscopy and Microanalysis.

[20]  S. Dhar,et al.  Infrared absorption and Raman spectroscopy studies of InSbBi layers grown by liquid phase epitaxy , 2012 .

[21]  Bernhard Schaffer,et al.  Sample preparation for atomic-resolution STEM at low voltages by FIB. , 2012, Ultramicroscopy.

[22]  E. O’Reilly,et al.  Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs , 2011, 1111.4394.

[23]  Wiebke Witte,et al.  GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration , 2011 .

[24]  A. Krotkus,et al.  Valence band anticrossing in GaBixAs1−x , 2007 .

[25]  T. Tiedje,et al.  Giant Spin-Orbit Bowing in GaAs$_{1-x}$Bi$_{x}$ , 2007 .

[26]  T. Tiedje,et al.  Giant spin-orbit bowing in GaAs1-xBix. , 2006, Physical review letters.

[27]  Angelo Mascarenhas,et al.  Band gap of GaAs1−xBix, 0 , 2003 .

[28]  François Schiettekatte,et al.  Molecular beam epitaxy growth of GaAs1−xBix , 2003 .

[29]  Stephen J. Pennycook,et al.  High-resolution Z-contrast imaging of crystals , 1991 .

[30]  Stephen J. Pennycook,et al.  Z-contrast stem for materials science , 1989 .

[31]  A. G. Cullis,et al.  The Microscopy Of Semiconducting Materials , 1980 .

[32]  D. Schiferl,et al.  The crystal structure of arsenic at 4.2, 78 and 299°K , 1969 .

[33]  S. Das,et al.  Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy , 2012 .