High-Performance 0.07- m CMOS with 9.5-ps Gate Delay and 150 GHz

We report room-temperature 0.07- m CMOS in- verter delays of 13.6 ps at 1.5 V and 9.5 ps at 2.5 V for SOI substrate; 16 ps at 1.5 V and 12 ps at 2.5 V for bulk substrate. This is the first room-temperature sub-10 ps inverter ring oscillator delay ever reported. PFET with very high drive current and reduction in parasitic resistances and capacitances for both NFET and PFET, realized by careful thermal budget optimization, contribute to the fast device speed. Moreover, the fast inverter delay was achieved without compromising the device short-channel characteristics. At V and nA/ m, minimum is about 0.085 m for NFET and 0.068 m for PFET. PFET is 360 A/ m, which is the highest PFET ever reported at comparable and . The SOI MOSFET has about one order of magnitude higher than bulk MOSFET due to the floating-body effect. At around 0.07 m , the NFET cut-off frequencies are 150 GHz for SOI and 135 GHz for bulk. These performance figures suggest that sub- tenth-micron CMOS is ready for multi-gigahertz digital circuits, and has a good potential for RF and microwave applications.