Dependence of the refractive index of AlxGa1−xN on temperature and composition at elevated temperatures
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E. Finkman | Joseph Salzman | U. Tisch | E. Finkman | O. Katz | J. Salzman | B. Meyler | O. Katz | Boris Meyler | U. Tisch
[1] F. McCrackin,et al. Errors arising from surface roughness in ellipsometric measurement of the refractive index of a surface , 1969 .
[2] P. Y. Yu,et al. Fundamentals of Semiconductors , 1995 .
[3] R. Davis,et al. Real‐time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry , 1996 .
[4] Wills,et al. Optical and electronic-structure study of cubic and hexagonal GaN thin films. , 1995, Physical review. B, Condensed matter.
[5] J. Muth,et al. Ordinary and extraordinary refractive indices for AlxGa1−xN epitaxial layers , 1999 .
[6] Robert M. Biefeld,et al. The band-gap bowing of AlxGa1−xN alloys , 1999 .
[7] Masamichi Yamanishi,et al. Field effects on the refractive index and absorption coefficient in AlGaAs quantum well structures and their feasibility for electrooptic device applications , 1987 .
[8] A. Sheleg,et al. Study of the elastic properties of gallium nitride , 1978 .
[9] M. Umeno,et al. Polarized Reflectance Spectroscopy and Spectroscopic Ellipsometry Determination of the Optical Anisotropy of Gallium nitride on Sapphire , 1997 .
[10] Moustakas,et al. Optical properties and temperature dependence of the interband transitions of cubic and hexagonal GaN. , 1994, Physical review. B, Condensed matter.
[11] Vladimir Dmitriev,et al. Spontaneous and stimulated emission from photopumped GaN grown on SiC , 1995 .
[12] Oliver Ambacher,et al. Optical constants of epitaxial AlGaN films and their temperature dependence , 1997 .
[13] A. Djurišić,et al. Optical Constants of AlxGa1—xN: Modeling over a Wide Spectral Range , 1999 .
[14] Shunro Fuke,et al. Optical properties of hexagonal GaN , 1997 .
[15] E. Ejder. Refractive Index of GaN , 1971, August 16.
[16] M. Dutta,et al. Raman analysis of the configurational disorder in AlxGa1−xN films , 1997 .
[17] R. Davis,et al. Growth and Doping of Al x Ga 1−x N Deposited Directly on α(6H)-SiC(0001) Substrates via Organometallic Vapor Phase Epitaxy , 1995 .
[18] R. Davis,et al. Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films , 1997 .
[19] Fred H. Pollak,et al. TEMPERATURE DEPENDENCE OF THE ENERGIES AND BROADENING PARAMETERS OF THE INTERBAND EXCITONIC TRANSITIONS IN WURTZITE GAN , 1997 .
[20] S. Adachi,et al. Model dielectric constants of GaP, GaAs, GaSb, InP, InAs, and InSb. , 1987, Physical review. B, Condensed matter.
[21] William Paul,et al. Optical constants of rf sputtered hydrogenated amorphous Si , 1979 .
[22] B. Cullity,et al. Elements of X-ray diffraction , 1957 .
[23] D. G. Thomas,et al. Exciton Spectrum of Cadmium Sulfide , 1959 .
[24] M. Umeno,et al. Optical properties of AlxGa1-xN/GaN heterostructures on sapphire by spectroscopic ellipsometry , 1998 .
[25] Masahiko Sano,et al. INGAN/GAN/ALGAN-BASED LASER DIODES WITH CLEAVED FACETS GROWN ON GAN SUBSTRATES , 1998 .
[26] Shuji Nakamura,et al. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets , 1996 .
[27] Irving H. Malitson,et al. Refraction and Dispersion of Synthetic Sapphire , 1962 .
[28] Aleksandra B. Djurišić,et al. Modeling the optical constants of hexagonal GaN, InN, and AlN , 1999 .
[29] Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD , 1997 .
[30] Papadopoulos,et al. Optical properties of diamond. , 1991, Physical review. B, Condensed matter.