Dependence of the refractive index of AlxGa1−xN on temperature and composition at elevated temperatures

The refractive index of hexagonal AlxGa1−xN at room temperature and its temperature dependence at elevated temperatures have been determined with high accuracy by spectroscopic ellipsometry. Measurements have been conducted on samples with aluminum molar fractions ranging from 0% to 65% and at temperatures between 290 and 580 K. The refractive index in the transparent spectral region has been determined as a function of photon energy, using the Kramers–Kronig relations with suitable approximations, and applying a multilayer model. An analytical expression for the composition and temperature dependent refractive index in the transparent region, above room temperature, has been obtained. The refractive index has been found to increase with increasing temperature. The shift of the refractive index is strongest for GaN and decreases for AlGaN with increasing aluminum molar fraction. The impact on the properties of GaN based waveguides is illustrated by a slab waveguide calculation.

[1]  F. McCrackin,et al.  Errors arising from surface roughness in ellipsometric measurement of the refractive index of a surface , 1969 .

[2]  P. Y. Yu,et al.  Fundamentals of Semiconductors , 1995 .

[3]  R. Davis,et al.  Real‐time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry , 1996 .

[4]  Wills,et al.  Optical and electronic-structure study of cubic and hexagonal GaN thin films. , 1995, Physical review. B, Condensed matter.

[5]  J. Muth,et al.  Ordinary and extraordinary refractive indices for AlxGa1−xN epitaxial layers , 1999 .

[6]  Robert M. Biefeld,et al.  The band-gap bowing of AlxGa1−xN alloys , 1999 .

[7]  Masamichi Yamanishi,et al.  Field effects on the refractive index and absorption coefficient in AlGaAs quantum well structures and their feasibility for electrooptic device applications , 1987 .

[8]  A. Sheleg,et al.  Study of the elastic properties of gallium nitride , 1978 .

[9]  M. Umeno,et al.  Polarized Reflectance Spectroscopy and Spectroscopic Ellipsometry Determination of the Optical Anisotropy of Gallium nitride on Sapphire , 1997 .

[10]  Moustakas,et al.  Optical properties and temperature dependence of the interband transitions of cubic and hexagonal GaN. , 1994, Physical review. B, Condensed matter.

[11]  Vladimir Dmitriev,et al.  Spontaneous and stimulated emission from photopumped GaN grown on SiC , 1995 .

[12]  Oliver Ambacher,et al.  Optical constants of epitaxial AlGaN films and their temperature dependence , 1997 .

[13]  A. Djurišić,et al.  Optical Constants of AlxGa1—xN: Modeling over a Wide Spectral Range , 1999 .

[14]  Shunro Fuke,et al.  Optical properties of hexagonal GaN , 1997 .

[15]  E. Ejder Refractive Index of GaN , 1971, August 16.

[16]  M. Dutta,et al.  Raman analysis of the configurational disorder in AlxGa1−xN films , 1997 .

[17]  R. Davis,et al.  Growth and Doping of Al x Ga 1−x N Deposited Directly on α(6H)-SiC(0001) Substrates via Organometallic Vapor Phase Epitaxy , 1995 .

[18]  R. Davis,et al.  Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films , 1997 .

[19]  Fred H. Pollak,et al.  TEMPERATURE DEPENDENCE OF THE ENERGIES AND BROADENING PARAMETERS OF THE INTERBAND EXCITONIC TRANSITIONS IN WURTZITE GAN , 1997 .

[20]  S. Adachi,et al.  Model dielectric constants of GaP, GaAs, GaSb, InP, InAs, and InSb. , 1987, Physical review. B, Condensed matter.

[21]  William Paul,et al.  Optical constants of rf sputtered hydrogenated amorphous Si , 1979 .

[22]  B. Cullity,et al.  Elements of X-ray diffraction , 1957 .

[23]  D. G. Thomas,et al.  Exciton Spectrum of Cadmium Sulfide , 1959 .

[24]  M. Umeno,et al.  Optical properties of AlxGa1-xN/GaN heterostructures on sapphire by spectroscopic ellipsometry , 1998 .

[25]  Masahiko Sano,et al.  INGAN/GAN/ALGAN-BASED LASER DIODES WITH CLEAVED FACETS GROWN ON GAN SUBSTRATES , 1998 .

[26]  Shuji Nakamura,et al.  InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets , 1996 .

[27]  Irving H. Malitson,et al.  Refraction and Dispersion of Synthetic Sapphire , 1962 .

[28]  Aleksandra B. Djurišić,et al.  Modeling the optical constants of hexagonal GaN, InN, and AlN , 1999 .

[29]  Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD , 1997 .

[30]  Papadopoulos,et al.  Optical properties of diamond. , 1991, Physical review. B, Condensed matter.