AlxGa1-xAs/AlyGa1-yAs VISIBLE LASERS GROWN BY MOCVD

AlGaAs/AlGaAs double-heterostructure (DH) visible lasers with low threshold current densities have been grown by metalorganic chemical vapor deposition (MOCVD). Proton-isolated narrow stripe visible lasers have good performance and uniformity of the characteristics over the whole wafer is excellent. Contamination of the undoped AlGaAs depends on the partial pressure ratio of V element to 111 elements as well as on Al content. Carbon and oxygen contamination is most essential and discussed in detail. Finally, some systematic results of life test for the MOCVD visible lasers will be presented.