论文信息 - Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer - 字舞流文

Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer

P. Ruterana | X. Wallart | S. E. Kazzi | S. Ziegler | K. Volz | B. Kunert | W. Stolz | L. Desplanque | C. Coinon | A. Beyer | Yi Wang