论文信息 - Pulse modulation of DH-(GaAl)As lasers

Pulse modulation of DH-(GaAl)As lasers

The pulse modulation of DH-(GaAl)As lasers at a bit rate of 200 Mbits/s was examined. To reduce the variation of the lasing pulse peak and lasing delay time due to combinations of "1" and "0" bits, prepumping condition and the damped oscillation parameters are important. The spontaneous carrier life time of DH-(GaAl)As lasers was measured as 2-5 ns.

T. Ito | T. Ozeki | T. Ito | T. Ozeki

[1] R. Broom,et al. Microwave self-modulation of a diode laser coupled to an external cavity , 1970 .

[2] T. Lee,et al. Measurement and Interpretation of Long Spontaneous Lifetimes in Double Heterostructure Lasers , 1972 .

[3] I. Hayashi,et al. JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE , 1970 .

[4] Y. Suematsu,et al. Carrier lifetime measurement of a junction laser using direct modulation , 1968 .

[5] N. G. Basov. 0-1-Dynamics of Injection Lasers , 1968 .

[6] R. Roldan. SPIKES IN THE LIGHT OUTPUT OF ROOM‐TEMPERATURE GaAs JUNCTION LASERS , 1967 .

[7] K. Konnerth,et al. DELAY BETWEEN CURRENT PULSE AND LIGHT EMISSION OF A GALLIUM ARSENIDE INJECTION LASER , 1964 .

[8] T. L. Paoli,et al. Direct modulation of semiconductor lasers , 1970 .

[9] D. A. Kleinman,et al. The maser rate equations and spiking , 1964 .