Explicit connection between sample geometry and Hall response

The linear galvanomagnetic response of four-contact devices to the presence of a magnetic field B is deduced from two normalized current densities ja0 and jb0 in the device under rotated biasing conditions in the absence of B. When B and the transport coefficients are homogeneous, the integrals of the scalar and cross products of ja0 and jb0 over the device volume fully capture the influence of the device geometry on the measured offset signal and Hall voltage, respectively. As a consequence, the galvanomagnetic response of homogeneous planar devices exhibiting fourfold rotational symmetry is parameterized by a single geometric parameter.

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