Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3

Temperature-dependent photoluminescence was used to investigate the impact of H on the optical properties of α-Ga2O3 films grown by halide vapor phase epitaxy. An additional UV luminescence line centered at 3.8 eV is observed at low temperatures, which strongly correlates with the concentration of H in the films. This luminescence line is assigned to donor–acceptor pair recombination involving an H-related shallow donor and H-decorated Ga vacancy (VGa-nH) as the acceptor, where n = 1, 2, 3. Previous reports have already suggested the impact of H on the electrical properties of Ga2O3, and the present study shows its clear impact on the optical properties of α-Ga2O3.

[1]  Z. Yin,et al.  Electrical and optical properties of hydrogen plasma treated β-Ga2O3 thin films , 2022, Journal of Semiconductors.

[2]  S. Fujita,et al.  Prospects for phase engineering of semi-stable Ga2O3 semiconductor thin films using mist chemical vapor deposition , 2022, Journal of Applied Physics.

[3]  Jihyun Kim,et al.  Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance , 2022, Journal of Vacuum Science & Technology A.

[4]  O. Bierwagen,et al.  β-Gallium oxide power electronics , 2022, APL Materials.

[5]  Dongbo Wang,et al.  Modulating the blue and green luminescence in the β-Ga2O3 films , 2021, Journal of Alloys and Compounds.

[6]  J. Jarman,et al.  Progress in atomic layer deposited α-Ga2O3 materials and solar-blind detectors , 2021, OPTO.

[7]  Leila Ghadbeigi,et al.  Optical Characterization of Gallium Oxide α and β Polymorph Thin-Films Grown on c-Plane Sapphire , 2021, Journal of Electronic Materials.

[8]  Michael C. Cao,et al.  Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)2O3 on m-plane sapphire , 2021, Science Advances.

[9]  F. Ren,et al.  Deep-level defects in gallium oxide , 2020, Journal of Physics D: Applied Physics.

[10]  R. Martin,et al.  Origin of Red Emission in β‐Ga2O3 Analyzed by Cathodoluminescence and Photoluminescence Spectroscopy , 2020, physica status solidi (b).

[11]  T. Sajavaara,et al.  Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering , 2020, Micromachines.

[12]  T. Shinohe,et al.  Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties , 2020, Semiconductor Science and Technology.

[13]  S. Stepanov,et al.  Halide Vapor Phase Epitaxy α‐ and ε‐Ga2O3 Epitaxial Films Grown on Patterned Sapphire Substrates , 2020, physica status solidi (a).

[14]  A. Koehler,et al.  Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition , 2020 .

[15]  B. Uberuaga,et al.  Chemical manipulation of hydrogen induced high p-type and n-type conductivity in Ga2O3 , 2019, Scientific Reports.

[16]  E. Ahmadi,et al.  Materials issues and devices of α- and β-Ga2O3 , 2019, Journal of Applied Physics.

[17]  J. Jarman,et al.  Atomic layer deposited α-Ga2O3 solar-blind photodetectors , 2019, Journal of Physics D: Applied Physics.

[18]  V. Dhanak,et al.  Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition , 2019, Journal of Crystal Growth.

[19]  S. Pearton,et al.  Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire , 2019, APL Materials.

[20]  J. Freitas,et al.  Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3 , 2019, ECS Journal of Solid State Science and Technology.

[21]  Shengqiang Zhou,et al.  Structural and optical properties of pulsed-laser deposited crystalline β-Ga2O3 thin films on silicon , 2019, Semiconductor Science and Technology.

[22]  M. Scarpulla,et al.  Incident wavelength and polarization dependence of spectral shifts in β-Ga2O3 UV photoluminescence , 2018, Scientific Reports.

[23]  Y. Liu,et al.  Interaction between hydrogen and gallium vacancies in β-Ga2O3 , 2018, Scientific Reports.

[24]  G. Tompa,et al.  HCl Flow-Induced Phase Change of α-, β-, and ε-Ga2O3 Films Grown by MOCVD , 2018 .

[25]  Stephen J. Pearton,et al.  A review of Ga2O3 materials, processing, and devices , 2018 .

[26]  N. Giles,et al.  Self-trapped holes in β-Ga2O3 crystals , 2017 .

[27]  O. Bordun,et al.  Photoluminescence Properties of β-Ga2O3 Thin Films Produced by Ion-Plasma Sputtering , 2017 .

[28]  G. Pozina,et al.  Emission properties of Ga2O3 nano-flakes: effect of excitation density , 2017, Scientific Reports.

[29]  S. Fujita,et al.  Epitaxial growth of corundum-structured wide band gap III-oxide semiconductor thin films , 2014 .

[30]  Tohru Honda,et al.  Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals , 2013 .

[31]  Joel B. Varley,et al.  Oxygen vacancies and donor impurities in β-Ga2O3 , 2010 .

[32]  Phil D. C. King,et al.  Observation of shallow-donor muonium in Ga2O3: Evidence for hydrogen-induced conductivity , 2010 .