论文信息 - The characterization of heteroepitaxial silicon - 字舞流文

The characterization of heteroepitaxial silicon

G. W. Cullen | M. S. Abrahams | R. T. Smith | J. Lagowski | L. Jastrzebski | W. E. Ham | M. T. Duffy | J. Corboy | G. Harbeke | M. Blumenfeld

[1] M. S. Abrahams,et al. Direct Observation of a Silicon-Sapphire Hetero-Epitaxial Interface by High Resolution Transmission Electron Microscopy , 1981, January 16.

[2] R. Bhargava,et al. Near Band‐Edge Luminescence in ZnSe Grown from Gallium Solution , 1979 .

[3] P. Zanzucchi,et al. Surface damage and the optical reflectance of single-crystal silicon. , 1978, Applied optics.

[4] M. S. Abrahams,et al. Some effects of planar defects near the Si/SiO2 interface on electrical properties of silicon‐on‐sapphire/MOS devices , 1978 .

[5] M. S. Abrahams,et al. Shear strain at corners and edges of epitaxial silicon on sapphire , 1978 .

[6] G. W. Cullen,et al. Early growth of silicon on sapphire. I. Transmission electron microscopy , 1976 .

[7] G. W. Cullen,et al. Misfit dislocations in heteroepitaxial Si on sapphire , 1976 .

[8] M. S. Abrahams,et al. Cross‐sectional specimens for transmission electron microscopy , 1974 .

[9] L. R. Weisberg,et al. Dislocation morphology in graded heterojunctions: GaAs1−xPx , 1969 .