Single domain epitaxial growth of yttria-stabilized zirconia on Si(1 1 1) substrate
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S. Kaneko | M. Yoshimoto | H. Funakubo | Y. Sawada | Y. Hirabayashi | K. Akiyama | T. Ito | S. Ohya | T. Oguni
[1] S. Kaneko,et al. Twin-Free Epitaxial Films Lateral Relation between YSZ(111) and Si(111) , 2006 .
[2] Dmitri O. Klenov,et al. Atomic Structure of (111) SrTiO3/Pt Interfaces , 2006 .
[3] C. Wenger,et al. On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111) , 2006 .
[4] C. Wenger,et al. Structure, twinning behavior, and interface composition of epitaxial Si(111) films on hex-Pr2O3(0001)∕Si(111) support systems , 2005 .
[5] Dmitri O. Klenov,et al. Extended defects in epitaxial Sc2O3 films grown on (111) Si , 2005 .
[6] Satoru Kaneko,et al. Effect of Buffer Layer on Epitaxial Growth of YSZ Deposited on Si Substrate by Slower Q-switched 266 nm YAG Laser , 2004 .
[7] T. Yoshitake,et al. Ferromagnetic Iron Silicide Thin Films Prepared by Pulsed-Laser Deposition , 2003 .
[8] M. Nagashima,et al. Growth Dependence of Reactively Sputtered Yttria-Stabilized Zirconia on Si(100), (110), (111) Substrates. , 1999 .
[9] D. Schlom,et al. Thermodynamic stability of binary oxides in contact with silicon , 1996 .
[10] M. Varela,et al. ArF and KrF excimer laser deposition of yttria‐stabilized zirconia on Si(100) , 1996 .
[11] E. V. Pechen,et al. Epitaxial growth of YBa2Cu3O7-δ films on oxidized silicon with yttria- and zirconia-based buffer layers , 1993 .
[12] H. Ishiwara,et al. Epitaxial Growth of SrTiO3 Films on Si(100) Substrates Using a Focused Electron Beam Evaporation Method , 1991 .
[13] D. Fork,et al. Epitaxial MgO on Si(001) for Y‐Ba‐Cu‐O thin‐film growth by pulsed laser deposition , 1991 .
[14] D. Fork,et al. Epitaxial yttria‐stabilized zirconia on hydrogen‐terminated Si by pulsed laser deposition , 1990 .
[15] Yukio Osaka,et al. Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on Silicon , 1988 .
[16] Y. Kado,et al. Heteroepitaxial growth of SrO films on Si substrates , 1987 .
[17] Xu Yong-nian,et al. Theoretical studies of metal disilicide-silicon interfaces. , 1986 .
[18] J. Poate,et al. Growth of single‐crystal CoSi2 on Si(111) , 1982 .
[19] N. Wakiya,et al. Effect of Yttria-Stabilized Zirconia Thickness on Crystal Structure and Electric Property of Epitaxial CeO2/Yttria-Stabilized Zirconia Buffer Layer in Metal/Ferroelectric/Insulator/Semiconductor Structure , 2001 .