Analysis and understanding of unique cryogenic phenomena in state-of-the-art SiGe HBTs
暂无分享,去创建一个
J. Cressler | J. Rieh | D. Ahlgren | G. Freeman | G. Niu | A. Joseph | Ying Li | R. Krithivasan | Q. Liang | Yuan Lu | A. Ahmed
[1] J. Cressler,et al. A New Negative-Differential-Resistance Effect in 350 GHz SiGe HBTs Operating at Cryogenic Temperatures , 2005, 2005 International Semiconductor Device Research Symposium.
[2] J. Cressler. Silicon Heterostructure Handbook : Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy , 2005 .
[3] P.R. Berger,et al. Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR , 2004, IEEE Electron Device Letters.
[4] R. Mira,et al. CMOS implementation of programmable logic gates and pipelined full adders using threshold logic gates based on NDR devices , 2004, Proceedings of the Twenty-First National Radio Science Conference, 2004. NRSC 2004..
[5] Kimikazu Sano,et al. 88 GHz dynamic 2:1 frequency divider using resonant tunnelling chaos circuit , 2003 .
[6] B. Jagannathan,et al. Noise performance scaling in high-speed silicon RF technologies , 2003, 2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers..
[7] Fan Chen,et al. Silicon-Germanium Heterojunction Bipolar Transistors , 2002 .
[8] S. Jeng,et al. SiGe HBTs with cut-off frequency of 350 GHz , 2002, Digest. International Electron Devices Meeting,.
[9] John D. Cressler,et al. A physics-based high-injection transit-time model applied to barrier effects in SiGe HBTs , 2002 .
[10] Pinaki Mazumder,et al. Standard CMOS implementation of a multiple-valued logic signed-digit adder based on negative differential-resistance devices , 2000, Proceedings 30th IEEE International Symposium on Multiple-Valued Logic (ISMVL 2000).
[11] A. Benvenuti,et al. A thermal-fully hydrodynamic model for semiconductor devices and applications to III-V HBT simulation , 1997 .
[12] Jung-Hui Tsai,et al. A novel InGaP/GaAs S-shaped negative-differential-resistance (NDR) switch for multiple-valued logic applications , 1997 .
[13] J. Cressler,et al. Impact of profile scaling on high-injection barrier effects in advanced UHV/CVD SiGe HBTs , 1996, International Electron Devices Meeting. Technical Digest.
[14] U. Auer,et al. A novel 3-D integrated HFET/RTD frequency multiplier , 1996 .
[15] J. Cressler,et al. Operation of SiGe heterojunction bipolar transistors in the liquid-helium temperature regime , 1995, IEEE Electron Device Letters.
[16] P. Houston,et al. New nonthermal mechanism for negative differential resistance in heterojunction bipolar transistors , 1993 .
[17] Gad Bahir,et al. A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n/sup +/-p HgCdTe photodiodes , 1992 .
[18] D. Klaassen,et al. A new recombination model for device simulation including tunneling , 1992 .
[19] R. C. Potter,et al. Bias circuit effects on the current‐voltage characteristic of double‐barrier tunneling structures: Experimental and theoretical results , 1990 .
[20] T. Itoh,et al. A Self Oscillating Qwitt Diode Mixer , 1989, 1989 19th European Microwave Conference.
[21] E. J. Prendergast,et al. A unified circuit model for bipolar transistors including quasi-saturation effects , 1985, IEEE Transactions on Electron Devices.
[22] C. T. Kirk,et al. A theory of transistor cutoff frequency (fT) falloff at high current densities , 1962, IRE Transactions on Electron Devices.
[23] J. Laskar,et al. Cryogenic performance of a 200 GHz SiGe HBT technology , 2003, 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440).
[24] E. Kane. Theory of Tunneling , 1961 .