Submicron MOSFET Structure for Minimizing Channel Hot-Electron Injection

Hot carrier injection into gate oxides is known for imposing one of the severest limitations on miniaturization of MOS transistors in VLSIs. This is because part of the carriers trapped in the oxide cause long-term device degradation. We have been investigating hot-electron injection in NMOS FETs, botl experimentally and theoretically, in search of device structures suitable for scaling down to the submicron level.