论文信息 - DX center analysis in Sn‐doped AlGaAs layer of double heterostructures

DX center analysis in Sn‐doped AlGaAs layer of double heterostructures

Capacitance as well as photovoltage methods have been used to analyze deep centers in an n‐type AlGaAs:Sn layer of double heterostructures. It is suggested that the trap with thermal activation energy equal to ΔE2=0.33±0.02 eV is associated with the L minimum of AlGaAs and could be interpreted as a DX center related to Sn. The observed changes of deep center concentration in double heterostructures are due to different Al contents within the depletion region.

M. Kaniewska | J. Kaniewski | K. Žďánský

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