The structure and magnetic properties of β-(Ga0.96Mn0.04)2O3 thin film

High quality epitaxial single phase (Ga 0.96 Mn 0.04 ) 2 O 3 and Ga 2 O 3 thin films have been prepared on sapphire substrates by using laser molecular beam epitaxy (L-MBE). X-ray diffraction results indicate that the thin films have the monoclinic structure with a \begin{document}$\left( {\bar 201} \right)$\end{document} preferable orientation. Room temperature (RT) ferromagnetism appears and the magnetic properties of β -(Ga 0.96 Mn 0.04 ) 2 O 3 thin film are enhanced compared with our previous works. Experiments as well as the first principle method are used to explain the role of Mn dopant on the structure and magnetic properties of the thin films. The ferromagnetic properties are explained based on the concentration of transition element and the defects in the thin films.

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