论文信息 - Photoluminescence of GaAlAs/GaAs quantum wells grown by metalorganic chemical vapor deposition

Photoluminescence of GaAlAs/GaAs quantum wells grown by metalorganic chemical vapor deposition

In this paper we will report GaAlAs/GaAs gradient refraction index separate confinement quantum wells structures by MOCVD growth and its optical properties. The sample were characterized by high-resolution photoluminescence measurements. For 8 nm single quantum well, the excitation luminescence spectra at 10 K are characterized by transitions which has a linewidth (FWHM) of 6.2 nm and large intensity, indicating abrupt GaAlAs/GaAs interface. The shift of X(e-hh) peak position versus the excitation level are also observed. The results of PL measurement show that sample quality has met the requirement of design and proven to be satisfactory.

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