论文信息 - Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE

Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE

Abstract We have fabricated interdigital metal-semiconductor-metal ultraviolet photoconductors using p-type GaN grown by MBE. The material had a hole concentration of 10 18 cm −3 and a mobility of 5 cm 2 V −1 s −1 . The spectral response of the detectors has been measured and it shows a peak at 364.2 nm (3.402 eV) possibly caused by excitonic effects. The transient response of the photodetector cannot be described by a single time constant. The rise and fall times of the photoresponse are different indicating that the theory usually applied to GaN photoconductors is not valid.

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