The bipolar mode FET: a new power device combining FET with BJT operation

Abstract In this paper the features of power BMFETs are presented. Characteristics in the off and on states are discussed for realistic cell structures, and the effect of the gaussian doping profile of the surface gate region on the blocking voltage is discussed for new BMFET structures halfway between standard vertical JFET and power BJTs. A comparative analysis with a standard power bipolar transistor of comparable geometry and doping shows that the new BMFET has higher current ratings at breakdown, larger current gain, does not suffer from current crowding phenomena and has lower saturation voltage.

[1]  B. J. Baliga,et al.  Vertical channel field-controlled thyristors with high gain and fast switching speeds , 1978, IEEE Transactions on Electron Devices.

[2]  S. Musumeci,et al.  Switching performances of enhanced gain bipolar mode field effect transistor (BMFET) , 1990, Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90..

[3]  R. Finke,et al.  A field terminated diode , 1976, IEEE Transactions on Electron Devices.

[4]  P. L. Hower.  Optimum design of power transistor switches , 1973 .

[5]  A. Goodman,et al.  The COMFET—A new high conductance MOS-gated device , 1983, IEEE Electron Device Letters.

[6]  S. Bellone,et al.  On state modeling of power JFET structures in the bipolar mode , 1985 .

[7]  G. Cocorullo,et al.  Current gain enhancement effect by gate doping in bipolar-mode field-effect transistor , 1990 .

[8]  G. Busatto,et al.  The turnoff transient of the bipolar-mode field-effect transistor , 1988 .

[9]  J.D. Plummer,et al.  Small geometry depleted base bipolar transistors (BSIT)—VLSI devices? , 1981, IEEE Transactions on Electron Devices.

[10]  T. Nagano,et al.  High power static induction thyristor , 1979, 1979 International Electron Devices Meeting.

[11]  P. Spirito,et al.  An analysis of thermal behavior of bipolar-mode JFET's , 1983, IEEE Electron Device Letters.

[12]  B. J. Baliga,et al.  Fast-switching insulated gate transistors , 1983, IEEE Electron Device Letters.

[13]  T. Ohmi,et al.  Punching through device and its integration—Static induction transistor , 1980, IEEE Transactions on Electron Devices.

[14]  J. Nishizawa,et al.  Analysis of static characteristics of a bipolar-mode SIT (BSIT) , 1982, IEEE Transactions on Electron Devices.

[15]  A. Yusa,et al.  Analysis of sit I–V characteristics by two-dimensional simulation , 1987 .

[16]  P. Spirito,et al.  Performance analysis of a Bipolar Mode JFET (BMFET) with normally off characteristics , 1986, 1986 17th Annual IEEE Power Electronics Specialists Conference.

[17]  P. Spirito,et al.  Analysis of a power bipolar-mode JFET device by two-dimensional numerical simulation , 1990, 21st Annual IEEE Conference on Power Electronics Specialists.

[18]  A. Galluzzo,et al.  Comparative analysis of power bipolar devices , 1990, 21st Annual IEEE Conference on Power Electronics Specialists.

[19]  P. Spirito,et al.  Trade-off between Blocking Voltage and Current Ratings in Normally-off Power BMFETs with Diffused Gates , 1991 .

[20]  B. Jayant Baliga.  Bipolar operation of power junction field effect transistors , 1980 .

[21]  V.A.K. Temple,et al.  MOS-Controlled thyristors—A new class of power devices , 1986, IEEE Transactions on Electron Devices.

[22]  Bogdan M. Wilamowski,et al.  Interpretation of exponential type drain characteristics of the static induction transistor , 1980 .

[23]  B. J. Baliga.  Analysis of insulated gate transistor turn-off characteristics , 1985, IEEE Electron Device Letters.

[24]  J. Nishizawa,et al.  Experimental study on current gain of BSIT , 1986, IEEE Transactions on Electron Devices.

[25]  Jun-ichi Nishizawa,et al.  Bipolar Mode Static Induction Transistor , 1980 .

[26]  Paolo Spirito,et al.  Two-dimensional analysis of the I-V characteristics of normally-off bipolar-mode FET devices , 1990 .

[27]  Paolo Spirito,et al.  A quasi-one-dimensional analysis of vertical JFET devices operated in the bipolar mode , 1983 .

[28]  P. Spirito,et al.  High-voltage bipolar mode JFET with normally off characteristics , 1985, IEEE Electron Device Letters.

[29]  Paolo Spirito,et al.  A self-consistent model for the SIT DC characteristics , 1991 .