A Novel High K Inter-Poly Dielectric(IPD), A1203 for Low VoltageMigh Speed Flash Memories: Erasing in msecs at 3.3V

We propose a novel high K dielectric, A1203 for low voltage/ high speed flash memory without built-in charge pumps. From the analytical modeling, we have quantified the impact of high K IPD and we have verified the feasibility of 10-11 nm A1203 IPD with K-10 for msecs erasing at k3.3V. We have also developed lOnm A1203 films which show the lowest leakage current ever reported for the dielectrics with K>5 [ 131. For the first time, high K dielectric has been demonstrated for high retention fish technology.