First-principles study on electronic and elastic properties of BN, AlN, and GaN
暂无分享,去创建一个
[1] Klaus Lischka,et al. Comparative Raman studies of cubic and hexagonal GaN epitaxial layers , 1996 .
[2] F. Bechstedt,et al. Ab initio study of structural, dielectric, and dynamical properties of GaN , 1998 .
[3] Muñoz,et al. Electronic and structural properties of cubic BN and BP. , 1995, Physical review. B, Condensed matter.
[4] H. Monkhorst,et al. SPECIAL POINTS FOR BRILLOUIN-ZONE INTEGRATIONS , 1976 .
[5] K. Tsubouchi,et al. Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial Films , 1985, IEEE Transactions on Sonics and Ultrasonics.
[6] Lu,et al. Zinc-blende-wurtzite polytypism in semiconductors. , 1992, Physical review. B, Condensed matter.
[7] C. T. Foxon,et al. Lattice parameters of gallium nitride , 1996 .
[8] Kim,et al. Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN. , 1996, Physical review. B, Condensed matter.
[9] W. Kohn,et al. Self-Consistent Equations Including Exchange and Correlation Effects , 1965 .
[10] G. E. Pikus,et al. Symmetry and strain-induced effects in semiconductors , 1974 .
[11] Scheffler,et al. Analysis of separable potentials. , 1991, Physical review. B, Condensed matter.
[12] Christensen,et al. Optical phonon modes in GaN and AlN. , 1995, Physical review. B, Condensed matter.
[13] R. Kato,et al. First-principles calculation of the elastic stiffness tensor of aluminium nitride under high pressure , 1994 .
[14] Marc Ilegems,et al. Infrared Lattice Vibrations and Free-Electron Dispersion in GaN , 1973 .
[15] Leonard Kleinman,et al. Efficacious Form for Model Pseudopotentials , 1982 .
[16] P. Vogl,et al. Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN , 1996 .
[17] E. S. Zouboulis,et al. Elastic constants of boron nitride , 1994 .
[18] P. Vogl,et al. Dependence on volume of the phonon frequencies and the ir effective charges of several III-V semiconductors , 1983 .
[19] Isamu Akasaki,et al. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells , 1997 .
[20] A. Sawaoka,et al. Characterization of wurtzite type boron nitride synthesized by shock compression , 1974 .
[21] Christensen,et al. Calculated structural phase transitions of aluminum nitride under pressure. , 1993, Physical review. B, Condensed matter.
[22] S. J. Berkowitz,et al. Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon , 1992 .
[23] Alan Francis Wright,et al. Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN , 1997 .
[24] A. Yamaguchi,et al. Determination of valence band splitting parameters in GaN , 1998 .
[25] Heinz Schulz,et al. Crystal structure refinement of AlN and GaN , 1977 .
[26] C. Thomsen,et al. Quantitative determination of hexagonal minority phase in cubic GaN using Raman spectroscopy , 1995 .
[27] S. Nakamura,et al. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes , 1996 .
[28] N. Hamada,et al. Band-structure calculations for boron nitrides with three different crystal structures , 1987 .
[29] Nelson,et al. Explicit treatment of the gallium 3d electrons in GaN using the plane-wave pseudopotential method. , 1994, Physical review. B, Condensed matter.
[30] M. T. Duffy,et al. Acoustic surface wave properties of epitaxially grown aluminum nitride and gallium nitride on sapphire , 1973 .
[31] T. Sota,et al. Constant pressure first-principles molecular dynamics study on BN, AlN, and GaN , 1997 .
[32] R. French,et al. Vibrational Spectroscopy of Aluminum Nitride , 1993 .
[33] E. Weber,et al. Elastic moduli of gallium nitride , 1997 .
[34] Suski,et al. Raman-scattering studies of aluminum nitride at high pressure. , 1993, Physical review. B, Condensed matter.
[35] R. Powell,et al. Synthesis of metastable epitaxial zinc‐blende‐structure AlN by solid‐state reaction , 1992 .
[36] S. Nakamura,et al. Optical phonons in GaN , 1996 .
[37] Takeshi Uenoyama,et al. Strain effect on electronic and optical properties of GaN/AlGaN quantum-well lasers , 1996 .
[38] Friedhelm Bechstedt,et al. LATTICE DYNAMICS OF GAN : EFFECTS OF 3D ELECTRONS , 1997 .
[39] Alvarez,et al. Electronic structure and properties of AlN. , 1994, Physical review. B, Condensed matter.
[40] Qteish. Conjugate-gradient methods for metallic systems and band-structure calculations. , 1995, Physical review. B, Condensed matter.
[41] Martins,et al. Efficient pseudopotentials for plane-wave calculations. , 1991, Physical review. B, Condensed matter.
[42] Kwiseon Kim,et al. Erratum: Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN [Phys. Rev. B 53, 16310 (1996)] , 1997 .
[43] Perlin,et al. Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure. , 1992, Physical review. B, Condensed matter.
[44] Scheffler,et al. Electronic and structural properties of GaN by the full-potential linear muffin-tin orbitals method: The role of the d electrons. , 1993, Physical review. B, Condensed matter.
[45] Michael S. Shur,et al. Piezoresistive effect in wurtzite n‐type GaN , 1996 .
[46] Su-Huai Wei,et al. Valence band splittings and band offsets of AlN, GaN, and InN , 1996 .
[47] T. Uda,et al. Electronic band calculations for zinc-blende BN with nonlocal density functionals , 1992 .
[48] B. Alder,et al. THE GROUND STATE OF THE ELECTRON GAS BY A STOCHASTIC METHOD , 2010 .
[49] Marc Ilegems,et al. Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers , 1971 .
[50] D. Vanderbilt,et al. Theory of polarization of crystalline solids. , 1993, Physical review. B, Condensed matter.
[51] Christensen,et al. Optical and structural properties of III-V nitrides under pressure. , 1994, Physical review. B, Condensed matter.
[52] Shuji Nakamura,et al. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime , 1997 .
[53] P. J. Dean,et al. Lattice Vibration Spectra of Aluminum Nitride , 1967 .
[54] Raffaele Resta,et al. MACROSCOPIC POLARIZATION IN CRYSTALLINE DIELECTRICS : THE GEOMETRIC PHASE APPROACH , 1994 .
[55] K. Miwa,et al. First-principles calculation of the structural, electronic, and vibrational properties of gallium nitride and aluminum nitride. , 1993, Physical review. B, Condensed matter.
[56] J. Devreese,et al. Pressure dependent properties of cubic boron nitride , 1989 .
[57] Robert Bruce Lindsay,et al. Physical Properties of Crystals , 1957 .
[58] K. Lakin,et al. Optical phonons of aluminum nitride , 1984 .
[59] D. Vanderbilt,et al. Electric polarization as a bulk quantity and its relation to surface charge. , 1993, Physical review. B, Condensed matter.
[60] B. Segall,et al. Electronic structure of (diamond C)/(sphalerite BN) (110) interfaces and superlattices. , 1989, Physical review. B, Condensed matter.
[61] S. Nakamura,et al. Brillouin scattering study of gallium nitride: elastic stiffness constants , 1997 .
[62] I. Akasaki,et al. Raman scattering in AlxGa1−xN alloys , 1991 .
[63] F. Bechstedt,et al. Ab initio lattice dynamics of BN and AlN: Covalent versus ionic forces , 1997 .
[64] Lam,et al. Theoretical study of BN, BP, and BAs at high pressures. , 1987, Physical review. B, Condensed matter.
[65] M. Khan,et al. Fundamental optical transitions in GaN , 1996 .
[66] A. Zunger,et al. Self-interaction correction to density-functional approximations for many-electron systems , 1981 .
[67] Gil,et al. Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry. , 1995, Physical review. B, Condensed matter.
[68] Marvin L. Cohen,et al. Special Points in the Brillouin Zone , 1973 .
[69] Izabella Grzegory,et al. Elastic constants of gallium nitride , 1996 .
[70] M. Berry. Quantal phase factors accompanying adiabatic changes , 1984, Proceedings of the Royal Society of London. A. Mathematical and Physical Sciences.
[71] P. Gielisse,et al. Raman spectra of AℓN, cubic BN and BP , 1968 .
[72] Segall,et al. Electronic structure and bonding at SiC/AlN and SiC/BP interfaces. , 1991, Physical review. B, Condensed matter.
[73] M. Shur,et al. Current‐voltage characteristics of strained piezoelectric structures , 1995 .
[74] David Vanderbilt,et al. Spontaneous polarization and piezoelectric constants of III-V nitrides , 1997 .
[75] A. Yamaguchi,et al. Reflectance spectroscopy on GaN films under uniaxial stress , 1997 .
[76] Inspec,et al. Properties of group III nitrides , 1994 .
[77] Martin,et al. Stresses in semiconductors: Ab initio calculations on Si, Ge, and GaAs. , 1985, Physical review. B, Condensed matter.
[78] Price,et al. Ab initio molecular dynamics with variable cell shape: Application to MgSiO3. , 1993, Physical review letters.
[79] A. Polian,et al. Raman scattering from cubic boron nitride up to 1600 K , 1992 .
[80] Kwiseon Kim,et al. Effective masses and valence-band splittings in GaN and AlN , 1997 .
[81] P. J. Dean,et al. Optical studies of the phonons and electrons in gallium nitride , 1970 .
[82] J. T. Devreese,et al. High pressure structural phase transformation in gallium nitride , 1992 .
[83] S. Nakamura,et al. Biaxial strain dependence of exciton resonance energies in wurtzite GaN , 1997 .
[84] B. N. Onwuagba. Energy band structure studies of zinc-blende BN and BP , 1994 .
[85] Chan,et al. First-principles total-energy calculation of gallium nitride. , 1992, Physical review. B, Condensed matter.