Molecular beam epitaxy of ZnCdSe/ZnSe strained quantum-well structures on GaAs(1 1 1)A substrates and piezoelectric properties
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[1] T. Mori,et al. Molecular beam epitaxial growth of ZnSe(111) films on misoriented GaAs(111) A substrates , 1996 .
[2] G. D. Brownlie,et al. Piezoelectric effect in ZnSe/ZnCdSe quantum wells grown on (211)B GaAs , 1996 .
[3] K. Shore,et al. Piezoelectric field effects in InGaAs (111)B quantum wells , 1995 .
[4] N. Matsumura,et al. Improvement in the Crystalline Quality of ZnSe(111) Films Grown by Molecular Beam Epitaxy Using Misoriented GaAs(111)A Substrates , 1995 .
[5] David A. B. Miller,et al. Observation of room‐temperature blue shift and bistability in a strained InGaAs‐GaAs 〈111〉 self‐electro‐optic effect device , 1990 .