The effects of C on the low-temperature formation and the properties of the spin-on dielectric films used for sub-50 nm technology and beyond
暂无分享,去创建一个
[1] A. Ogura,et al. Suppression Mechanism of Volume Shrinkage for SOG Film by Plasma Treatment , 2010 .
[2] M. J. Kim,et al. Shallow trench isolation liners and their role in reducing lattice strains , 2008 .
[3] W. Gill,et al. Effects of sintering on dielectric constants of mesoporous silica , 2004 .
[4] J. W. Lee,et al. Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 ㎚ DRAM , 2003 .
[5] James P. Godschalx,et al. Development of a Low‐Dielectric‐Constant Polymer for the Fabrication of Integrated Circuit Interconnect , 2000 .
[6] J.R. Davis,et al. Impurities in silicon solar cells , 1980, IEEE Transactions on Electron Devices.
[7] T. C. Mcgill,et al. Nature of the 0.111‐eV acceptor level in indium‐doped silicon , 1979 .
[8] Todd Krajewski,et al. Properties of New Low Dielectric Constant Spin-on Silicon Oxide based Polymers , 1997 .