Method and structure for improving reliability of non-volatile resistive memory

The invention discloses a method and a structure for improving the reliability of a non-volatile resistive memory. The structure comprises a plurality of same resistive random access memory units, wherein the resistive random access memory units are connected in parallel to form a parallel redundant structure; and current excitation is applied to each of two ends of a common electrode of the parallel redundant structure to program and/or erase the parallel redundant structure in a current scanning mode. By the invention, the reliability in application of the non-volatile resistive memory to an embedded system can be improved.