Resistive and structural properties of La1.85Sr0.15Cu1−yZnyO4 films

Single-phase c-axis aligned La1.85Sr0.15Cu1−yZnyO4 films were grown by pulsed laser deposition with Zn contents up to a value of y of 0.12. The film properties indicate the existence of defects, in addition to the Zn impurities, that are unintentionally introduced during the film growth. These defects are probably oxygen vacancies, and have a distinctly different effect on Tc from the Zn. The separation of the two effects resolves earlier ambiguities in the observed rates of Tc depression.