Turn-off characteristics of p-n-p-n devices
暂无分享,去创建一个
Abstract The turn-off characteristics of p-n-p-n devices are investigated and a general turn-off criterion is established. It is found that the voltage across center junction of a p-n-p-n device at the onset of turn-off is not zero as assumed by previous investigators, but the junction is forward biased. Experimental results of the gain and junction voltages at turn-off agree closely with those predicted theoretically.
[1] I. M. Mackintosh,et al. Turn-off gain in p-n-p-n triodes☆ , 1961 .
[2] J. F. Gibbons. A critique of the theory of p-n-p-n devices , 1964 .
[3] E. D. Wolley. Gate turn-off in p-n-p-n devices , 1966 .