RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

AlGaN/GaN high electron mobility transistors (HEMTs) irradiated with 1.8-MeV protons show more relative degradation in RF power/current gain, cutoff frequency fT, and maximum oscillation frequency fmax than DC transconductance. These result from radiation-induced increases in fast bulk and surface trap densities, as well as increasing impedance mismatch at high frequencies with increasing proton fluence. NH3-rich MBE devices show less degradation in DC transconductance, but more degradation in RF gain than Ga-rich devices.

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