Low-threshold and high-temperature operation of InGaAlP-based proton-implanted red VCSELs
暂无分享,去创建一个
[1] Kent D. Choquette,et al. Continuous wave operation of 640-660 nm selectively oxidised AlGaInP vertical-cavity lasers , 1995 .
[2] R. Michalzik,et al. 57% wallplug efficiency oxide-confined 850 nm wavelength GaAs VCSELs , 1997 .
[3] Jim Nohava,et al. Producible GaAs-based MOVPE-grown vertical-cavity top-surface emitting lasers with record performance , 1995 .
[4] H. Uenohara,et al. Polarization-controlled 850-nm-wavelength vertical-cavity surface-emitting lasers grown on [311]B substrates by metal-organic chemical vapor deposition , 1999 .
[5] Kenichi Iga,et al. Surface emitting semiconductor lasers , 1988 .
[6] P. Dapkus,et al. Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation , 1995 .
[7] G. R. Hadley,et al. Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers , 1997 .
[8] K.D. Choquette,et al. Temperature-dependent characteristics and single-mode performance of AlGaInP-based 670-690-nm vertical-cavity surface-emitting lasers , 1995, IEEE Photonics Technology Letters.
[9] H. J. Unold,et al. High-power VCSELs: single devices and densely packed 2-D-arrays , 1999 .
[10] K.J. Malloy,et al. Efficient room-temperature continuous-wave AlGaInP/AlGaAs visible (670 nm) vertical-cavity surface-emitting laser diodes , 1994, IEEE Photonics Technology Letters.
[11] Kent D. Choquette,et al. High-frequency modulation characteristics of red VCSELs , 1997 .