Optical-frequency gas flow meter on the basis of transistor structures with negative differential resistance

The article investigated the optical-frequency gas flow meter based on a transistor structure with negative differential resistance (NDR). A schematic diagram and design of an optical-frequency gas flow transducer that operates in the microwave range (0.85 to 1.5 GHz), which consists of a bipolar and field-effect transistor with a Schottky barrier, is proposed as a photosensitive element using a photoresistor. A mathematical model of an optical-frequency gas flow meter based on a transistor structure with negative differential resistance has been developed, which allows one to obtain the main characteristics of the transducer in a wide frequency range. Theoretically and experimentally, the possibility of controlling both the reactive component and the negative differential resistance from changes in control voltage and power is shown, it extends the functionality of optical transducers and allows linearization of the conversion function within (0.1 - 0.2)%. Experimental studies have shown that the greatest sensitivity and linearity of the conversion function of an opticalfrequency gas flow transducer lies in the range from 3 V to 3.5 V. The sensitivity of the developed optical-frequency gas flow transducer based on a transistor structure with NDR is 146 kHz/liter/hour, and the measurement error is ± 1.5%.

[1]  Dong-Shong Liang,et al.  Frequency divider design using the Λ-type negative-differential-resistance circuit , 2010, 2010 53rd IEEE International Midwest Symposium on Circuits and Systems.

[2]  Waldemar Wójcik,et al.  The application of inverse analysis in strain distribution recovery using the fibre Bragg grating sensors , 2009 .

[3]  Waldemar Wójcik,et al.  Optically powered system for automatic protection of a fiber segment , 2008 .

[4]  Paweł Komada,et al.  Optical transducers with frequency output , 2017, Symposium on Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments (WILGA).

[5]  Dong-Shong Liang,et al.  Investigation of MOS-NDR Voltage Controlled Ring Oscillator Fabricated by CMOS Process , 2005, 2005 IEEE Conference on Electron Devices and Solid-State Circuits.

[6]  A. Osadchuk,et al.  Mathematical model of transistor equivalent of electrical controlled capacity , 2008, 2008 International Conference on "Modern Problems of Radio Engineering, Telecommunications and Computer Science" (TCSET).

[7]  V. S. Osadchuk,et al.  Modeling of the gate junction in GaAs MESFETs , 2000 .

[8]  V. V. Lukin,et al.  MATHEMATICAL MODEL OF PIEZOELECTRIC OSCILLATING SYSTEM WITH ELECTRODES OF VARIABLE NONLINEAR AND CONSTANT LINEAR AIR GAP , 2017 .

[9]  A. V. Osadchuk,et al.  Frequency transducer of the pressure on the basis of reactive properties of transistor structure with negative resistance , 2015, 2015 International Siberian Conference on Control and Communications (SIBCON).

[10]  Piotr Kisała,et al.  Theory of photoreactive effect in bipolar and MOSFET transistors , 2019, Symposium on Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments (WILGA).

[11]  A. V. Osadchuk,et al.  Radiomeasuring Thermal Flowmeter of Gas on the Basis of Transistor Structure with Negative Resistance , 2008 .