Effect of electron trapping on IGFET characteristics
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Carlton M. Osburn | T. H. Ning | T. Ning | C. Osburn | H. Yu | H. N. Yu
[1] S. A. Abbas,et al. Hot‐carrier instability in IGFET’s , 1975 .
[2] J. Verwey,et al. Avalanche-injected electron currents in SiO2 at high injection densities , 1974 .
[3] C. Bulucea,et al. Avalanche injection into the oxide in silicon gate-controlled devices—II. Experimental results , 1975 .
[4] M Pepper,et al. Electron injection into SiO2 from an avalanching p-n junction , 1973 .
[5] C. N. Berglund,et al. AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2 , 1969 .
[6] T. Ning,et al. Optically induced injection of hot electrons into SiO2 , 1974 .
[7] Tak H. Ning,et al. Electron trapping at positively charged centers in SiO2 , 1975 .
[8] H. Hara,et al. A New Instability in MOS Transistor Caused by Hot Electron and Hole Injection from Drain Avalanche Plasma into Gate Oxide , 1970 .
[9] J. M. Andrews,et al. Electrochemical Charging of Thermal SiO2 Films by Injected Electron Currents , 1971 .
[10] H. G. Dill,et al. Electron gate currents and threshold stability in the n-channel stacked gate MOS tetrode , 1971 .
[11] Tak H. Ning,et al. High‐field capture of electrons by Coulomb‐attractive centers in silicon dioxide , 1976 .
[12] P. Arnett,et al. Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devices , 1975 .
[13] C. Bulucea,et al. Avalanche injection into the oxide in silicon gate-controlled devices—I theory , 1975 .
[14] R. A. Gdula,et al. The Effects of Processing on Hot Electron Trapping in SiO2 , 1976 .
[15] Tak H. Ning,et al. Threshold instability in IGFET’s due to emission of leakage electrons from silicon substrate into silicon dioxide , 1976 .