Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers

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[2]  S. Yokokawa,et al.  An over 200-W output power GaN HEMT push-pull amplifier with high reliability , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

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[4]  Masaru Sato,et al.  An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader , 2019, IEEE Electron Device Letters.

[5]  Shintaro Shinjo,et al.  Advanced GaN HEMT Modeling Techniques and Power Amplifiers for Millimeter-Wave Applications , 2020, 2020 IEEE/MTT-S International Microwave Symposium (IMS).

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[8]  Georg Boeck,et al.  Efficient and wideband two-stage 100 W GaN-HEMT power amplifier , 2014, 2014 9th European Microwave Integrated Circuit Conference.

[9]  K. Bathich,et al.  Harmonically-tuned octave bandwidth 200 W GaN power amplifier , 2012, 2012 7th European Microwave Integrated Circuit Conference.

[10]  Songcheol Hong,et al.  A W-Band 4-GHz Bandwidth Phase-Modulated Pulse Compression Radar Transmitter in 65-nm CMOS , 2015, IEEE Transactions on Microwave Theory and Techniques.

[11]  Masaru Sato,et al.  X-Ku Wide-Bandwidth GaN HEMT MMIC Amplifier with Small Deviation of Output Power and PAE , 2014, 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[12]  Michael Roberg,et al.  A 2-20 GHz Distributed GaN Power Amplifier Using a Novel Biasing Technique , 2019, 2019 IEEE MTT-S International Microwave Symposium (IMS).

[13]  Angelika Bayer,et al.  Transmission Line Transformers , 2016 .

[14]  Yuji Ando,et al.  280 W output power single-ended amplifier using single-die GaN-FET for W-CDMA cellular base stations , 2005 .

[15]  Joy Laskar,et al.  Applications of GaN Microwave Electronic Devices , 2003 .

[16]  Kenichi Okada,et al.  300-GHz. 100-Gb/s InP-HEMT Wireless Transceiver Using a 300-GHz Fundamental Mixer , 2018, 2018 IEEE/MTT-S International Microwave Symposium - IMS.

[17]  K. Makiyama,et al.  Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

[18]  L.C.N. de Vreede,et al.  A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications , 2008, IEEE Transactions on Microwave Theory and Techniques.

[19]  S. Keller,et al.  High-power AlGaN/GaN HEMTs for Ka-band applications , 2005, IEEE Electron Device Letters.

[20]  Dong L. Wu,et al.  A 220-GHz InP HEMT Direct Detection Polarimeter , 2019, IEEE Transactions on Microwave Theory and Techniques.

[22]  G. Boeck.  Modeling and design of multilayer transmission line transformers and baluns , 2005, SBMO/IEEE MTT-S International Conference on Microwave and Optoelectronics, 2005..

[23]  Masaru Sato,et al.  An over 230 W, 0.5–2.1 GHz Wideband GaN Power Amplifier using Transmission-Line-Transformer-Based Combining Technique , 2020, 2020 IEEE/MTT-S International Microwave Symposium (IMS).

[24]  Masaru Sato,et al.  3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier , 2016, 2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR).

[25]  Yasushi Itoh,et al.  Fundamental Perspective of Future High Power Devices and Amplifiers for Wireless Communication Systems , 2003 .

[26]  Satoshi Yoshida,et al.  S-Band GaN on Si Based 1kW-Class SSPA System for Space Wireless Applications , 2013, IEICE Trans. Electron..

[28]  Y. Miyamoto,et al.  High-Power-Density InAlGaN/GaN-HEMT Technology for W-Band Amplifier , 2016, 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[29]  W. Wojtasiak,et al.  A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios , 2020, Micromachines.

[30]  Tsuyoshi Sugiura,et al.  High Efficiency Class-E and Compact Doherty Power Amplifiers with Novel Harmonics Termination for Handset Applications , 2019, IEICE Trans. Electron..

[31]  Georg Boeck,et al.  Harmonically tuned 100 W broadband GaN HEMT power amplifier with more than 60 % PAE , 2011, 2011 41st European Microwave Conference.

[32]  Christiane Poblenz,et al.  Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy , 2006, IEICE Trans. Electron..

[33]  Charles F. Campbell,et al.  Design and performance of 16–40GHz GaN distributed power amplifier MMICs utilizing an advanced 0.15µm GaN process , 2016, 2016 IEEE MTT-S International Microwave Symposium (IMS).

[34]  R. Vetury,et al.  A 0.1-1.8 GHz, 100 W GaN HEMT Power Amplifier Module , 2010, 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[35]  Masaru Sato,et al.  A 0.6–2.1-GHz Wideband GaN High-Power Amplifier Using Transmission-Line-Transformer-Based Differential-Mode Combiner With Second-Harmonic Suppression , 2021, IEEE Transactions on Microwave Theory and Techniques.