Direct one-stage plasma-chemical synthesis of chalcogenide films doped with ytterbium

In this paper we descried the plasma-enhanced chemical vapor deposition (PECVD) approach for preparation of the arsenic sulfide thin films modified by ytterbium. Radio frequency (40.68 MHz) plasma discharge at low pressure (0.1 Torr) was used for the initiation of chemical interactions between precursors. Arsenic monosulfide (As4S4), elemental high-pure S and Yb were employed as the starting materials. The composition of the films was controlled by regulating of the temperature of the ytterbium source supplied with external heater. The Yb concentration in the Yb:AsxSy films was from 1 to 7 at%. The chalcogenide materials were also studied by Scanning Electron Microscopy (SEM), Optical spectroscopy in the range of 250-1000 nm, and Raman spectroscopy.

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