Wide-voltage SOI-BiCDMOS technology for high-temperature automotive applications

This paper describes a new wide-voltage SOI-BiCDMOS technology for high-temperature automotive applications. This technology is capable of integrating 35V, 60V, and 80V Nch and Pch LDMOS, 35V BJT, and 6V CMOS devices on a single chip. The devices are completely isolated dielectrically using both deep trench isolation (DTI) and a buried oxide (BOX) layer in a silicon-on-insulator (SOI) wafer for stable operation at high temperatures up to 175°C. The devices were developed using a 0.35μm process. In particular, the LDMOS devices have achieved competitive levels of low Ron∗ A and good SOA.

[1]  T. Onishi,et al.  Multi-voltage SOI-BiCDMOS for 14V&42V automotive applications , 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

[2]  Kimimori Hamada,et al.  A 60 V BiCDMOS device technology for automotive applications , 1995, IAS '95. Conference Record of the 1995 IEEE Industry Applications Conference Thirtieth IAS Annual Meeting.

[3]  P. Moens,et al.  I3T80: a 0.35 /spl mu/m based system-on-chip technology for 42 V battery automotive applications , 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.

[4]  C. Contiero,et al.  BCD8 from 7V to 70V: a new 0.l8μm Technology Platform to Address the Evolution of Applications towards Smart Power ICs with High Logic Contents , 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.

[5]  T. Miyajima,et al.  Wide Voltage Power Device implementation in O.25μm SOI BiC-DMOS , 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

[6]  K. Shirai,et al.  Ultra-low on-resistance LDMOS implementation in 0.13µm CD and BiCD process technologies for analog power IC's , 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.