High-frequency transistor power amplifier

PURPOSE:To make it possible to electric characteristics, a price and reliability by IC-implementing an input-output circuit or inter-stage matching circuit by a distribution constant circuit to be constituted on a CaO-TiO2 dielectric substrate. CONSTITUTION:On high-dielectric substrates 33 and 34 (a CaO-TiO2-based compound with a dielectric constant of 80-200) before and behind of UHF high-output transistor Tr32 provided on earth conductor 31, input and output circuits are IC- implemented and then contained in case 35 serving as the earth conductor for the both, thereby obtaining an UHF Tr power amplifier with input and output connectors 36 and 37 and bias application terminal 38. Next, input and output-side matching circuits consists of open stubs 39 and 40, and 47 and 48 of strip lines, strip lines 41 and 49, DC-block chip capacitors 42 and 50, short stubs 43 and 51 of RF-choking strip lines, and earth terminals 46 and 55 provided on substrates.