Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts
暂无分享,去创建一个
Akito Kuramata | Masataka Higashiwaki | Kohei Sasaki | Shigenobu Yamakoshi | Takekazu Masui | S. Yamakoshi | K. Sasaki | M. Higashiwaki | A. Kuramata | T. Masui
[1] F. Recht,et al. Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature , 2006, IEEE Electron Device Letters.
[2] Kiyoshi Shimamura,et al. Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping , 2008 .
[3] R. F. Karlicek,et al. Electrical and structural analysis of high-dose Si implantation in GaN , 1997 .
[4] Hideo Aida,et al. Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method , 2008 .
[5] R. Opila,et al. Dielectric properties of electron‐beam deposited Ga2O3 films , 1994 .
[6] Kazuo Nakajima,et al. Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal , 2007 .
[7] Akito Kuramata,et al. Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy , 2012 .
[8] B. J. Baliga,et al. Power semiconductor device figure of merit for high-frequency applications , 1989, IEEE Electron Device Letters.
[9] Akito Kuramata,et al. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates , 2012 .
[10] James A. Fellows,et al. Electrical activation studies of GaN implanted with Si from low to high dose , 2002 .
[11] T. Kimoto,et al. Nitrogen Ion Implantation into α‐SiC Epitaxial Layers , 1997 .
[12] H. H. Tippins. Optical Absorption and Photoconductivity in the Band Edge of β − Ga 2 O 3 , 1965 .
[13] H. Dunlap,et al. DIODES IN SILICON CARBIDE BY ION IMPLANTATION , 1969 .
[14] Takayoshi Oshima,et al. Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth , 2008 .
[15] Hideo Hosono,et al. Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals , 1997 .
[16] John C. Zolper,et al. Ion implantation doping and isolation of GaN , 1995 .
[17] Noboru Ichinose,et al. Large-size β-Ga2O3 single crystals and wafers , 2004 .
[18] H. Matsunami,et al. Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001) , 2004 .