论文信息 - Towards rare-earth-ion-doped $Al_2O_3$ active integrated optical devices

Towards rare-earth-ion-doped $Al_2O_3$ active integrated optical devices

Aluminum oxide planar waveguides with low loss (0.11 dB/cm at 1523 nm) are fabricated. Channel waveguides are obtained by reactive ion etching. Erbium-doped layers show no upconversion luminescence, a hint that ion clustering is small.

Markus Pollnau | Jonathan D. B. Bradley | Feridun Ay | Kerstin Worhoff

[1] Erdan Gu,et al. Conference on Lasers and Electro-OP , 2007 .

[2] M. Pollnau,et al. Fabrication of low-loss channel waveguides in Al2O3 and Y2O3 layers by inductively coupled plasma reactive ion etching , 2007 .

[3] Sergey I. Bozhevolnyi,et al. Conference on Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008 , 2008 .