Integrated circuit design for manufacturing through statistical simulation of process steps

The methodology, implementation, and results of a design for manufacturing (DFM) technique as applied to an integrated circuit boron base formation for an n-p-n transistor are presented. The primary purpose of the DFM technique is to achieve acceptable statistical prediction of the results by using the minimum number of variables and reducing the time required to perform physically based simulations. Excellent statistical results are achieved while the number of simulations is reduced by at least a factor of five if judicious statistical techniques are applied. >