600 V-GTBT with high current gains

The GTBT, a grounded-trench-MOS structure assisted bipolar-mode transistor, with 600 V-class V/sub DSS/ and a current gain of 100 at 100 A/cm/sup 2/ drain current density has been achieved by structural improvements. This value is 3.5 times as high as the previous value (Murakami et al, 1996). This paper discusses the relationships between the structural parameters of the GTBT and its current gain theoretically, and reports experimental results.

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