Fabrication of metal-semiconductor nanowire heterojunctions.

Nanoscale sensors and switches for future electronics may take advantage of metal-semiconductor end-to-end nanowire contacts that can be made by simultaneous evaporation of In and SiO powders. The In and Si subnanowires (indicated) are crystallographically oriented at each junction and are sheathed by silica nanotubes. (Chemical Equation Presented)

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