SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications

The silicon-germanium heterojunction bipolar transistor (SiGe HBT) is the first practical bandgap-engineered device to be realized in silicon. SiGe HBT technology combines transistor performance competitive with III-V technologies with the processing maturity, integration levels, yield, and hence, cost commonly associated with conventional Si fabrication. In the ten-and-one-half years since the first demonstration of a functional transistor, SiGe HBT technology has emerged from the research laboratory, entered manufacturing on 200-mm wafers, and is poised to enter the commercial RF and microwave market. State-of-the-art SiGe HBT's can deliver: (1) f/sub T/ in excess of 50 GHz; (2) f/sub max/ in excess of 70 GHz; (3) minimum noise figure below 0.7 dB at 2.0 GHz; (4) 1/f noise corner frequencies below 500 Hz; (5) cryogenic operation; (6) excellent radiation hardness; (7) competitive power amplifiers; and (8) reliability comparable to Si. A host of record-setting digital, analog, RF, and microwave circuits have been demonstrated in the past several years using SiGe HBT's, and recent work on passives and transmission lines on Si suggest a migratory path to Si-based monolithic microwave integrated circuits (MMIC's) is possible. The combination of SiGe HBT's with advanced Si CMOS to form an SiGe BiCMOS technology represents a unique opportunity for Si-based RF system-on-a-chip solutions. This paper reviews state-of-the-art SiGe HBT technology and assesses its potential for current and future RF and microwave systems.

[1]  E. Johnson.  Physical limitations on frequency and power parameters of transistors , 1965 .

[2]  J. W. Matthews,et al.  Defects in epitaxial multilayers: I. Misfit dislocations* , 1974 .

[3]  J. W. Matthews,et al.  Defects in epitaxial multilayers: II. Dislocation pile-ups, threading dislocations, slip lines and cracks , 1975 .

[4]  J. W. Matthews,et al.  Defects in epitaxial multilayers: III. Preparation of almost perfect multilayers , 1976 .

[5]  Bernard S. Meyerson,et al.  Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition , 1986 .

[6]  R. People,et al.  Physics and applications of Ge x Si 1-x /Si strained-layer heterostructures , 1986 .

[7]  G. Patton,et al.  Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy , 1988, 1987 International Electron Devices Meeting.

[8]  P. Lu.  Low-frequency noise in self-aligned bipolar transistors , 1987 .

[9]  J.M.C. Stork,et al.  Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy , 1988, IEEE Electron Device Letters.

[10]  J. Hoyt,et al.  Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing , 1989, IEEE Electron Device Letters.

[11]  D. Harame,et al.  75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors , 1990, IEEE Electron Device Letters.

[12]  J.M.C. Stork,et al.  SiGe-base heterojunction bipolar transistors: physics and design issues , 1990, International Technical Digest on Electron Devices.

[13]  Keith A. Jenkins,et al.  Sub-30ps ECL circuits using high-f/sub T/ Si and SiGe epitaxial base SEEW transistors , 1990, International Technical Digest on Electron Devices.

[14]  J.M.C. Stork,et al.  Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology , 1990, International Technical Digest on Electron Devices.

[15]  J. Comfort,et al.  Low temperature operation of Si and SiGe bipolar transistors , 1990, International Technical Digest on Electron Devices.

[16]  Bernard S. Meyerson,et al.  The thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition , 1991 .

[17]  J. Cressler,et al.  Single crystal emitter gap for epitaxial Si- and SiGe-base transistors , 1991, International Electron Devices Meeting 1991 [Technical Digest].

[18]  K. Tanaka,et al.  A Si wide-band MMIC amplifier family for L-S band consumer product applications , 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.

[19]  J. Cressler,et al.  Sub-30-ps ECL circuit operation at liquid-nitrogen temperature using self-aligned epitaxial SiGe-base bipolar transistors , 1991, IEEE Electron Device Letters.

[20]  J.W. Slotboom,et al.  Parasitic energy barriers in SiGe HBTs , 1991, IEEE Electron Device Letters.

[21]  K. R. Cioffi.  Monolithic L-band amplifiers operating at milliwatt and sub-milliwatt DC power consumptions , 1992, IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers.

[22]  Bernard S. Meyerson,et al.  UHV/CVD growth of Si and Si: Ge alloys: chemistry, physics, and device applications , 1992, Proc. IEEE.

[23]  J.M.C. Stork,et al.  A high performance epitaxial SiGe-base ECL BiCMOS technology , 1992, 1992 International Technical Digest on Electron Devices Meeting.

[24]  U. Erben,et al.  MBE-grown Si/SiGe HBTs with high beta , f/sub T/, and f/sub max/ , 1992, IEEE Electron Device Letters.

[25]  1/f noise in n-p-n GaAs/AlGaAs heterojunction bipolar transistors:iImpact of intrinsic transistor and parasitic series resistances , 1993 .

[26]  J. Cressler,et al.  Current gain rolloff in graded-base SiGe heterojunction bipolar transistors , 1993, IEEE Electron Device Letters.

[27]  E. de Fresart,et al.  High-performance SiGe epitaxial base bipolar transistors produced by a reduced-pressure CVD reactor , 1993, IEEE Electron Device Letters.

[28]  J.M.C. Stork,et al.  Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors , 1993, Proceedings of IEEE International Electron Devices Meeting.

[29]  Yo Yamaguchi,et al.  An L-band ultra low power consumption monolithic low noise amplifier [for mobile communication] , 1993, 15th Annual GaAs IC Symposium.

[30]  Erich Kasper,et al.  High speed SiGe-HBT with very low base sheet resistivity , 1993, Proceedings of IEEE International Electron Devices Meeting.

[31]  J. Cressler,et al.  On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues , 1993 .

[32]  J.M.C. Stork,et al.  High-low polysilicon-emitter SiGe-base bipolar transistors , 1993, IEEE Electron Device Letters.

[33]  J. Cressler,et al.  On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations , 1993 .

[34]  C. Kermarrec,et al.  Ultra low power low noise amplifiers for wireless communications , 1993, 15th Annual GaAs IC Symposium.

[35]  Keith A. Jenkins,et al.  Optimization of SiGe HBT technology for high speed analog and mixed-signal applications , 1993, Proceedings of IEEE International Electron Devices Meeting.

[36]  U. Konig,et al.  Multi emitter finger SiGe-HBTs with f/sub max/ up to 120 GHz , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[37]  D. Harame,et al.  SiGe HBTs reach the microwave and millimeter-wave frontier , 1994, Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[38]  M. Soda,et al.  Si-analog IC's for 20 Gb/s optical receiver , 1994 .

[39]  1/f noise characterization of base current and emitter interfacial oxide breakup in n-p-n polyemitter bipolar transistors , 1994, IEEE Electron Device Letters.

[40]  T. Kamins,et al.  Effect of current and voltage stress on the DC characteristics of SiGe-base heterojunction bipolar transistors , 1994, Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[41]  H. Schumacher,et al.  Low-noise performance of SiGe heterojunction bipolar transistors , 1994, Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium.

[42]  C. Kermarrec,et al.  A 200 mm SiGe-HBT technology for wireless and mixed-signal applications , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[43]  John D. Cressler,et al.  Silicon germanium heterojunction bipolar technology: the next leap in silicon? , 1994, IEEE International Solid-State Circuits Conference.

[44]  T. Suzaki,et al.  SiGe bipolar ICs for 20 Gb/s optical transmitter , 1994, Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[45]  J. Cressler,et al.  An epitaxial emitter-cap SiGe-base bipolar technology optimized for liquid-nitrogen temperature operation , 1994, IEEE Electron Device Letters.

[46]  T. Kleinpenning,et al.  Low-Frequency Noise in Polysilicon Emitter Bipolar Transistors , 1994, ESSDERC '94: 24th European Solid State Device Research Conference.

[47]  M. Tutt,et al.  Tradeoff between 1/f noise and microwave performance in AlGaAs/GaAs heterojunction bipolar transistors , 1994 .

[48]  Kevin W. Kobayashi,et al.  Ultra-low dc power GaAs HBT S- and C-band low noise amplifiers for portable wireless applications , 1995 .

[49]  Bernard S. Meyerson,et al.  12-GHz Gilbert mixers using a manufacturable Si/SiGe epitaxial-base bipolar technology , 1995, Proceedings of Bipolar/Bicmos Circuits and Technology Meeting.

[50]  Monolithic 26 GHz and 40 GHz VCOs with SiGe heterojunction bipolar transistor , 1995, Proceedings of International Electron Devices Meeting.

[51]  J. Babcock,et al.  Low-frequency noise in UHV/CVD Si- and SiGe-base bipolar transistors , 1995, Proceedings of Bipolar/Bicmos Circuits and Technology Meeting.

[52]  K. Aufinger,et al.  SiGe base bipolar technology with 74 GHz f/sub max/ and 11 ps gate delay , 1995, Proceedings of International Electron Devices Meeting.

[53]  J.W. Slotboom,et al.  Selective-epitaxial base technology with 14 ps ECL-gate delay, for low power wide-band communication systems , 1995, Proceedings of International Electron Devices Meeting.

[54]  T. Suzaki,et al.  A self-aligned SiGe base bipolar technology using cold wall UHV/CVD and its application to optical communication ICs , 1995, Proceedings of Bipolar/Bicmos Circuits and Technology Meeting.

[55]  Hermann Schumacher,et al.  Enhanced SiGe heterojunction bipolar transistors with 160 GHz-f/sub max/ , 1995, Proceedings of International Electron Devices Meeting.

[56]  M. Caymax,et al.  DEGMDATION OF Si1 -xGe, EPITAXIAL HETEROJUNCTION BIPOLAR TRANSISTORS BY 1-MeV FAST NEUTRONS , 1995 .

[58]  John D. Cressler,et al.  Si/SiGe epitaxial-base transistors. II. Process integration and analog applications , 1995 .

[59]  J. Babcock,et al.  Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT's , 1995, IEEE Electron Device Letters.

[60]  J. Babcock,et al.  Ionizing radiation tolerance of high-performance SiGe HBT's grown by UHV/CVD , 1995 .

[61]  J. Cressler,et al.  Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits , 1995 .

[62]  Alvin J. Joseph,et al.  Correlation of low-frequency noise and emitter-base reverse-bias stress in epitaxial Si- and SiGe-base bipolar transistors , 1995, Proceedings of International Electron Devices Meeting.

[63]  J. R. Long,et al.  A 1.9 GHz low-voltage silicon bipolar receiver front-end for wireless personal communications systems , 1995 .

[64]  F. Sato,et al.  Sub-20 ps ECL circuits with high-performance super self-aligned selectively grown SiGe base (SSSB) bipolar transistors , 1995 .

[65]  Keith A. Jenkins,et al.  High-Q inductors in standard silicon interconnect technology and its application to an integrated RF power amplifier , 1995, Proceedings of International Electron Devices Meeting.

[66]  Yo Yamaguchi,et al.  An L-band ultra-low-power-consumption monolithic low-noise amplifier , 1995 .

[67]  M. Caymax,et al.  Degradation of Si/sub 1-x/Ge/sub x/ epitaxial heterojunction bipolar transistors by 1-MeV fast neutrons , 1995 .

[68]  John D. Cressler,et al.  Re-engineering silicon: Si-Ge heterojunction bipolar technology , 1995 .

[69]  S. Voinigescu,et al.  SiGe HBT technology: device and application issues , 1995, Proceedings of International Electron Devices Meeting.

[70]  Neutral base recombination in advanced SiGe HBTs and its impact on the temperature characteristics of precision analog circuits , 1995, Proceedings of International Electron Devices Meeting.

[71]  H. Tezuka,et al.  The optical terminal IC: A 2.4 Gb/s receiver and a 1:16 demultiplexer in one chip , 1995, Proceedings of Bipolar/Bicmos Circuits and Technology Meeting.

[72]  Bernard S. Meyerson,et al.  A 23 GHz static 1/128 frequency divider implemented in a manufacturable Si/SiGe HBT process , 1995, Proceedings of Bipolar/Bicmos Circuits and Technology Meeting.

[73]  D. Harame,et al.  A 5-GHz SiGe HBT return-to-zero comparator , 1995, Proceedings of Bipolar/Bicmos Circuits and Technology Meeting.

[74]  K. Washio,et al.  Sub-10-fJ ECL/68-/spl mu/A 4.7-GHz divider ultra-low-power SiGe base bipolar transistors with a wedge-shaped CVD-SiO/sub 2/ isolation structure and a BPSG-refilled trench , 1996, International Electron Devices Meeting. Technical Digest.

[75]  A. Karanicolas.  A 2.7 V 900 MHz CMOS LNA and mixer , 1996, 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.

[76]  J. Cressler,et al.  Impact of profile scaling on high-injection barrier effects in advanced UHV/CVD SiGe HBTs , 1996, International Electron Devices Meeting. Technical Digest.

[77]  J.M. Ford,et al.  Comparison of time-to-failure of GeSi and Si bipolar transistors , 1996, IEEE Electron Device Letters.

[78]  Fritz J. Kub,et al.  A 230-Watt S-band SiGe heterojunction bipolar transistor , 1996 .

[79]  U. Seiler,et al.  1-W SiGe power HBTs for mobile communication , 1996, IEEE Microwave and Guided Wave Letters.

[80]  T.H. Lee,et al.  A 1.5 V, 1.5 GHz CMOS low noise amplifier , 1996, 1996 Symposium on VLSI Circuits. Digest of Technical Papers.

[81]  R. Gotzfried,et al.  Zero power consumption Si/SiGe HBT SPDT T/R antenna switch , 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

[82]  J.R. Long,et al.  RF analog and digital circuits in SiGe technology , 1996, 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.

[83]  J. Sturm,et al.  Suppression of boron outdiffusion in SiGe HBTs by carbon incorporation , 1996, International Electron Devices Meeting. Technical Digest.

[84]  D.L. Harame,et al.  Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace , 1996, International Electron Devices Meeting. Technical Digest.

[85]  J. Babcock,et al.  Low-frequency noise characteristics of UHV/CVD epitaxial Si- and SiGe-base bipolar transistors , 1996, IEEE Electron Device Letters.

[86]  Weinan Gao,et al.  A 5-GHz SiGe HBT return-to-zero comparator for RF A/D conversion , 1996 .

[87]  T. Suzaki,et al.  A 2.4 Gb/s receiver and a 1:16 demultiplexer in one chip using a super self-aligned selectively grown SiGe base (SSSB) bipolar transistor , 1996 .

[88]  John D. Cressler,et al.  Low-frequency noise in UHV/CVD epitaxial Si and SiGe bipolar transistors , 1996, IEEE J. Solid State Circuits.

[89]  Keith A. Jenkins,et al.  An 11-GHz 3-V SiGe voltage-controlled oscillator with integrated resonator , 1996, Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting.

[90]  R. Gotzfried,et al.  SiGe-technology and components for mobile communication systems , 1996, Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting.

[91]  L. Larson,et al.  Si/SiGe HBT technology for low-cost monolithic microwave integrated circuits , 1996, 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.

[92]  F. Beisswanger,et al.  Design of RF integrated circuits using SiGe bipolar technology , 1997, Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting.

[93]  J. Bock,et al.  42 GHz static frequency divider in a Si/SiGe bipolar technology , 1997, 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers.

[94]  John D. Cressler,et al.  The impact of Ge profile shape on the operation of SiGe HBT precision voltage references , 1997, Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting.

[95]  David L. Harame.  High performance BiCMOS process integration: trends, issues, and future directions , 1997, Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting.

[96]  K. Jenkins,et al.  Integrated RF components in a SiGe bipolar technology , 1997 .

[97]  High reliability metal insulator metal capacitors for silicon germanium analog applications , 1997, Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting.

[98]  J. Song,et al.  Comments on On the base profile design and optimization of epitaxial Si- and SiGe-base bipolar tech , 1997 .

[99]  K. Washio,et al.  130-GHz f/sub T/ SiGe HBT technology , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[100]  K. Washio,et al.  A selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[101]  S. Jeng,et al.  A SiGe HBT BiCMOS technology for mixed signal RF applications , 1997, Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting.

[102]  S. Clark,et al.  Neutron radiation tolerance of advanced UHV/CVD SiGe HBT BiCMOS technology , 1997 .

[103]  T. Tatsumi,et al.  A 1 Gb/s 8-channel array OEIC with SiGe photodetectors , 1997, 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers.

[104]  E. Bergeault,et al.  Large-signal performance of high-BV/sub CEO/ graded epi-base SiGe HBTs at wireless frequencies , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[105]  Alvin J. Joseph,et al.  Neutral base recombination and its influence on the temperature dependence of Early voltage and current gain-Early voltage product in UHV/CVD SiGe heterojunction bipolar transistors , 1997 .

[106]  Integration of SiGe heterojunction bipolar transistors in a 200 mm industrial BiCMOS technology , 1997 .

[107]  J. Burghartz,et al.  A 4 b 8 GSample/s A/D converter in SiGe bipolar technology , 1997, 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers.

[108]  Alvin J. Joseph,et al.  Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBT's , 1997 .

[109]  D.J. Allstot,et al.  A fully integrated CMOS 900 MHz LNA utilizing monolithic transformers , 1998, 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156).

[110]  T. Masuda,et al.  40 Gb/s analog IC chipset for optical receiver using SiGe HBTs , 1998, 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156).

[111]  M. Soda,et al.  A 10 Gb/s SiGe bipolar framer/demultiplexer for SDH systems , 1998, 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156).

[112]  John D. Cressler,et al.  Base-profile optimization for minimum noise figure in advanced UHV/CVD SiGe HBT's , 1998 .

[113]  S. Clark,et al.  An investigation of the spatial location of proton-induced traps in SiGe HBTs , 1998 .