Cell power switching circuit in semiconductor memory device and voltage supplying method therefor

The cell power switching circuit in which can suppress a leak current in the standby operation, reduce wake up time at the time of transition to a mode of operation the semiconductor memory device is disclosed. Such cell power switching circuit, in response to a first switch control signal is applied for selectively outputting one of a second power supply voltage having a first power supply voltage and the second level higher than the level of the first power supply voltage to the first switching output stage the power of the first switching unit; Is that a second power in response to a switch control signal of the first output to the third one of the power supply voltage with an output voltage and the second level lower than the first power voltage of the switching output stage as the cell power voltage to the second switching output stage and a switching unit; Wherein the cell is a power voltage, a standby state in the third to be supplied as a power supply voltage is supplied as then to be supplied as the second supply voltage during the time has been set in advance when switching the operation state from the standby mode, the first power supply voltage to, and a cell power control unit for controlling the state of said first and second switch control signal. A semiconductor memory device, RAM's taeyi ticks, cell switching power, standby mode